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2N2906A

Description
600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18
Categorysemiconductor    Discrete semiconductor   
File Size103KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N2906A Overview

600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18

2N2906A Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum on-time45 ns
Maximum off time300 ns
Maximum collector current0.6000 A
Maximum Collector-Emitter Voltage60 V
Processing package descriptionHERMETIC SEALED, METAL CAN-3
stateACTIVE
packaging shapeROUND
Package SizeCYLINDRICAL
Terminal formWIRE
Terminal locationBOTTOM
Packaging MaterialsMETAL
structureSINGLE
Number of components1
Transistor component materialsSILICON
Maximum ambient power consumption0.5000 W
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor40
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR SWITCHING TRANSISTORS
2N2906A
2N2907A
TO-18
Switching And Linear Application DC to VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N2906A, 07A
UNIT
V
V
V
mA
mW
mW/deg C
W
mW/deg C
deg C
VCEO
60
Collector -Emitter Voltage
VCBO
60
Collector -Base Voltage
VEBO
5.0
Emitter -Base Voltage
IC
600
Collector Current Continuous
PD
400
Power Dissipation @Ta=25 degC
2.28
Derate Above 25deg C
PD
1.8
@ Tc=25 degC
10.3
Derate Above 25deg C
Tj, Tstg
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
SYMBOL
VCEO*
VCBO
VEBO
ICBO
TEST CONDITION
IC=10mA,IB=0
IC=10uA.IE=0
IE=10uA, IC=0
VCB=50V, IE=0
VALUE
MIN
MAX
60
-
60
-
5.0
-
-
10
UNIT
V
V
V
nA
Base Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Ta=150 deg C
VCB=50V, IE=0
ICEX
VCE=30V, VBE=0.5V
IB
VCE=30V, VBE=0.5V
VCE(Sat)* IC=150mA,IB=15mA
IC=500mA,IB=50mA
VBE(Sat) * IC=150mA,IB=15mA
IC=500mA,IB=50mA
-
-
-
-
-
-
2N2906A
>40
>40
>40
40-120
>40
10
50
50
0.4
1.6
1.3
2.6
2N2907A
>75
>100
>100
100-300
>50
uA
nA
nA
V
V
V
V
DC Current Gain
hFE
IC=0.1mA,VCE=10V
IC=1mA,VCE=10V
IC=10mA,VCE=10V
IC=150mA,VCE=10V*
IC=500mA,VCE=10V*
Continental Device India Limited
Data Sheet
Page 1 of 3

2N2906A Related Products

2N2906A 2N2907A
Description 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18
Number of terminals 3 3
Transistor polarity PNP PNP
Maximum on-time 45 ns 45 ns
Maximum off time 300 ns 100 ns
Maximum Collector-Emitter Voltage 60 V 60 V
Processing package description HERMETIC SEALED, METAL CAN-3 TO-18, 3 PIN
state ACTIVE CONSULT MFR
packaging shape ROUND round
Package Size CYLINDRICAL cylindrical
Terminal form WIRE Wire
Terminal location BOTTOM BOTTOM
Packaging Materials METAL Metal
structure SINGLE single
Number of components 1 1
Transistor component materials SILICON silicon
Maximum ambient power consumption 0.5000 W 0.4000 W
Transistor type GENERAL PURPOSE SMALL SIGNAL Universal small signal
Minimum DC amplification factor 40 100

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