Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR RF TRANSISTORS
2N3498, 2N3499,
2N3500, 2N3501
TO-39
Metal Can Package
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
j
, T
stg
2N3498
2N3499
100
100
6
500
1.0
5.71
5.0
28.6
-65 to +200
2N3500
2N3501
150
150
300
UNITS
V
V
V
mA
W
mW/ºC
W
mW/ºC
ºC
R
th(j-a)
R
th(j-c)
175
35
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Emitter Breakdown Voltage
2N3498/3499
2N3500/3501
Collector Base Breakdown Voltage
2N3498/3499
2N3500/3501
Emitter Base Breakdown Voltage
ALL
Collector Leakage Current
2N3498/3499
2N3498/3499
2N3500/3501
2N3500/3501
Emitter Leakage Current
ALL
I
EBO
V
EB
=4V, I
C
=0
I
CBO
V
CB
=50V, I
E
=0
V
CB
=50V, I
E
=0,T
A
=150ºC
V
CB
=75V, I
E
=0
V
CB
=75V, I
E
=0,T
A
=150ºC
BV
CBO
BV
CEO
*
I
C
=10mA,I
B
=0
100
150
VALUE
TYP
UNITS
MAX
V
V
I
C
=10µA, I
E
=0
100
150
V
V
BV
EBO
I
E
=10µA, I
C
=0
6
50
50
50
50
25
V
nA
µA
nA
µA
nA
Continental Device India Limited
Data Sheet
Page 1 of 5
NPN SILICON PLANAR RF TRANSISTORS
2N3498, 2N3499,
2N3500, 2N3501
TO-39
Metal Can Package
DESCRIPTION
SYMBOL TEST CONDITION
MIN
VALUE
TYP
UNITS
MAX
0.2
0.25
0.4
0.6
0.8
0.9
1.2
1.4
V
V
V
V
V
V
V
V
Collector Emitter Saturation Voltage
2N3500/3501
2N3498/3499
Base Emitter Saturation Voltage
2N3500/3501
2N3498/3499
DC Current Gain
2N3498/3500
2N3499/3501
2N3498/3500
2N3499/3501
2N3498/3500
2N3499/3501
2N3498/3500
2N3499/3501
2N3500
2N3501
2N3498
2N3499
SMALL SIGNAL CHARACTERISTICS
V
CE(Sat)
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=150mA,I
B
=15mA*
I
C
=300mA,I
B
=30mA*
V
BE(Sat)
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=150mA,I
B
=15mA*
I
C
=300mA,I
B
=30mA*
h
FE
*
I
C
=0.1mA,V
CE
=10V
20
35
25
50
35
75
40
100
15
20
15
20
I
C
=1mA,V
CE
=10V
I
C
=10mA,V
CE
=10V
I
C
=150mA,V
CE
=10V*
120
300
I
C
=300mA,V
CE
=10V*
I
C
=300mA,V
CE
=10V*
Input Impedence
2N3498/3500
2N3499/3501
Voltage Feedback Ratio
2N3498/3500
2N3499/3501
Small Signal Current Gain
2N3498/3500
2N3499/3501
Continental Device India Limited
h
ie
I
C
=10mA,V
CE
=10V,
f=1KHz
0.2
0.25
1.0
1.25
KΩ
h
re
| h
fe
|
I
C
=10mA,V
CE
=10V,
f=1KHz
I
C
=10mA,V
CE
=10V,
f=1KHz
Data Sheet
2.5
4.0
50
75
300
375
x10
-4
Page 2 of 5
NPN SILICON PLANAR RF TRANSISTORS
2N3498, 2N3499,
2N3500, 2N3501
TO-39
Metal Can Package
DESCRIPTION
Output Admittance
2N3498/3500
2N3499/3501
Transition Frequency
ALL
SYMBOL TEST CONDITION
MIN
h
oe
I
C
=10mA,V
CE
=10V,
f=1KHz
f
T
I
C
=20mA,V
CE
=20V,
f=100MHz
C
ob
2N3498/3499
2N3500/3501
V
CB
=10V,I
E
=0, f=100KHz
C
ib
ALL
V
BE
=0.5V, I
C
=0, f=100KHz
150
VALUE
TYP
MAX
100
200
UNITS
µmhos
MHz
Output Capacitance
10
8
80
pF
pF
pF
Input Capacitance
SWITCHING CHARACTERISTICS
Delay Time
t
d
20
ns
Rise Time
Storage Time
t
r
t
s
I
C
=150mA, I
B1
=15mA
V
CC
=100V, V
EB
=2V
35
800
ns
ns
I
C
=150mA, I
B1
=I
B2
=15mA
V
CC
=100V
Fall Time
t
s
80
ns
*Pulse Test: Pulse Width <300µs, Duty Cycle <2%
Continental Device India Limited
Data Sheet
Page 3 of 5
2N3498, 2N3499,
2N3500, 2N3501
TO-39
Metal Can Package
TO-39 Metal Can Package
A
B
D
G
2
1
3
PIN CONFIGURATION
1. EMITTER
2. BASE
3. COLLECTOR
L
H
J
3
2
1
Packing Detail
PACKAGE
TO-39
STANDARD PACK
Details
Net Weight/Qty
500 pcs/polybag 540 gm/500 pcs
INNER CARTON BOX
Size
Qty
3" x 7.5" x 7.5"
20K
Data Sheet
F
All dimensions are in mm
DIM
A
B
C
D
E
F
G
H
J
K
L
MIN
MAX
8.50
9.39
7.74
8.50
6.09
6.60
0.40
0.53
—
0.88
2.41
2.66
4.82
5.33
0.71
0.86
0.73
1.02
12.70
—
42 DEG 48 DEG
E
K
C
OUTER CARTON BOX
Size
Qty
Gr Wt
17" x 15" x 13.5"
32K
40 kgs
Page 4 of 5
Continental Device India Limited
Notes
2N3498, 2N3499,
2N3500, 2N3501
TO-39
Metal Can Package
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished in the Data Sheet and
on the CDIL Web Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies
or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any
CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for
use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete
Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do
so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
Disclaimer
CDIL is a registered Trademark of
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150,
5141 1112
Fax + 91-11-2579 5290, 5141 1119
www.cdilsemi.com
email@cdil.com
2N3498_3501Rev110801
Continental Device India Limited
Continental Device India Limited
Data Sheet
Page 5 of 5
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