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2N3498

Description
500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
Categorysemiconductor    Discrete semiconductor   
File Size188KB,5 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N3498 Overview

500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR RF TRANSISTORS
2N3498, 2N3499,
2N3500, 2N3501
TO-39
Metal Can Package
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
j
, T
stg
2N3498
2N3499
100
100
6
500
1.0
5.71
5.0
28.6
-65 to +200
2N3500
2N3501
150
150
300
UNITS
V
V
V
mA
W
mW/ºC
W
mW/ºC
ºC
R
th(j-a)
R
th(j-c)
175
35
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Emitter Breakdown Voltage
2N3498/3499
2N3500/3501
Collector Base Breakdown Voltage
2N3498/3499
2N3500/3501
Emitter Base Breakdown Voltage
ALL
Collector Leakage Current
2N3498/3499
2N3498/3499
2N3500/3501
2N3500/3501
Emitter Leakage Current
ALL
I
EBO
V
EB
=4V, I
C
=0
I
CBO
V
CB
=50V, I
E
=0
V
CB
=50V, I
E
=0,T
A
=150ºC
V
CB
=75V, I
E
=0
V
CB
=75V, I
E
=0,T
A
=150ºC
BV
CBO
BV
CEO
*
I
C
=10mA,I
B
=0
100
150
VALUE
TYP
UNITS
MAX
V
V
I
C
=10µA, I
E
=0
100
150
V
V
BV
EBO
I
E
=10µA, I
C
=0
6
50
50
50
50
25
V
nA
µA
nA
µA
nA
Continental Device India Limited
Data Sheet
Page 1 of 5

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