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2N3700

Description
RF SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size136KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N3700 Overview

RF SMALL SIGNAL TRANSISTOR

2N3700 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeRF small signal
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3700
2N3701
TO-18
General purpose amplifier
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
SYMBOL
VALUE
VCBO
140
Collector -Base Voltage
VCEO
80
Collector -Emitter Voltage
VEBO
7.0
Emitter -Base Voltage
IC
1.0
Collector Current
PD
500
Power Dissipation @Ta=25 deg C
2.85
Derate Above 25 deg C
PD
1.8
@TC=25 deg C
10.6
Derate Above 25 deg C
Tj, Tstg
-65 to +200
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Rth(j-c)
70
Junction to Case
Rth(j-a)
245
Junction to Ambient
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
ICBO
VCB=90V, IE=0
-
Collector-Cut off Current
UNIT
V
V
V
A
mW
mW/deg C
W
mW/deg C
deg C
deg C/W
deg C/W
MAX
10
UNIT
nA
Emitter-Cut off Current
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Emitter (Sat) Voltage
Base Emitter (Sat) Voltage
DC Current Gain
IEBO
VCBO
VCEO*
VEBO
VCE(Sat)*
VBE(Sat) *
hFE*
VCB=90V, IE=0
VEB=5V, IC=0
IC=100uA, IE=-0
IC=30mA, IB=0
IE=100uA, IC=-0
IC=150mA,IB=15mA
IC=500mA,IB=50mA
IC=150mA,IB=15mA
IC=0.1mA,VCE=10V
IC=10mA,VCE=10V
IC=150mA,VCE=10V
IC=500mA,VCE=10V
IC=1A,VCE=10V
Tc= -55 deg C
IC=150mA,VCE=10V
-
10
-
10
140
-
80
-
7.0
-
-
0.2
-
0.5
-
1.1
2N3700
2N3701
>50
30-100
>90
40-12O
100-300
40-12O
>50
30-100
>15
>15
uA
nA
V
V
V
V
V
V
>40
-
Continental Device India Limited
Data Sheet
Page 1 of 3

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