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2N3906

Description
200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Categorysemiconductor    Discrete semiconductor   
File Size362KB,6 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N3906 Overview

200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

2N3906 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum on-time70 ns
Maximum off time300 ns
Maximum collector current0.2000 A
Maximum Collector-Emitter Voltage40 V
Processing package descriptionCASE 29-11, TO-226, 3 PIN
stateDISCONTINUED
packaging shaperound
Package Sizecylindrical
Terminal formTHROUGH-hole
terminal coatingtin lead
Terminal locationBOTTOM
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Maximum ambient power consumption0.6250 W
Transistor typeUniversal small signal
Minimum DC amplification factor30
Rated crossover frequency250 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS
2N3905 / 2N3906
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
E
BC
General Purpose Switching And Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation T
a
=25ºC
Derate Above 25ºC
Power Dissipation T
a
=60ºC
Power Dissipation T
c
=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
P
D
T
j
, T
stg
VALUE
40
40
5.0
200
625
5.0
250
1.5
12
-55 to +150
UNITS
V
V
V
mA
mW
mW/ºC
mW
W
mW/ºC
ºC
R
th (j-c)
Rth
(j-a)
83.3
200
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
Base Cut Off Current
DC Current Gain
SYMBOL
V
CEO
V
CBO
V
EBO
I
CEX
I
BL
*h
FE
TEST CONDITION
I
C
=1mA, I
B
=0
I
C
=10µA. I
E
=0
I
E
=10µA, I
C
=0
V
CE
=30V, V
EB
=3V
V
CE
=30V, V
EB
=3V
I
C
=0.1mA, V
CE
=1V
I
C
=1mA, V
CE
=1V
I
C
=10mA, V
CE
=1V
I
C
=50mA, V
CE
=1V
I
C
=100mA, V
CE
=1V
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
2N3905
2N3906
>40
>40
>40
>40
>5.0
>5.0
< 50
< 50
< 50
< 50
>30
>60
>40
>80
50-150
100-300
>30
>60
>15
>30
< 0.25
< 0.25
< 0.40
< 0.40
0.65 - 0.85 0.65 - 0.85
< 0.95
< 0.95
UNITS
V
V
V
nA
nA
Collector Emitter Saturation Voltage
*V
CE (sat)
Base Emitter Saturation Voltage
*V
BE (sat)
V
V
V
V
*Pulse Condition: =300µs, Duty Cycle=2%
µ
2N3905_3906Rev_1 071105E
Continental Device India Limited
Data Sheet
Page 1 of 5

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Description 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PNP SILICON PLANAR EPITAXIAL TRANSISTORS

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