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2N4030

Description
1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
Categorysemiconductor    Discrete semiconductor   
File Size148KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N4030 Overview

1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39

2N4030 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current1 A
Maximum Collector-Emitter Voltage80 V
Processing package descriptionTO-39, 3 PIN
stateACTIVE
packaging shaperound
Package Sizecylindrical
Terminal formWire
terminal coatingNOT SPECIFIED
Terminal locationBOTTOM
Packaging MaterialsMetal
structuresingle
Number of components1
Transistor component materialssilicon
Transistor typeUniversal small signal
Minimum DC amplification factor70
Rated crossover frequency150 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR TRANSISTORS
2N4030, 2N4031
2N4032, 2N4033
TO-39
Metal Can Package
2N4030 And 2N4033 ARE PNP SMALL SIGNAL GENERAL PURPOSE
AMLIFIER, TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
2N4030,32
V
CEO
60
Collector Emitter Voltage
V
CBO
Collector Base Voltage
60
Emitter Base Voltage
Collector Current
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
V
EBO
I
CM
P
D
P
D
T
j
, T
stg
5
1
800
4.6
4
22.85
-65 to +200
2N4031, 33
80
80
UNITS
V
V
V
A
mW
mW/ºC
W
mW/ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
BV
CEO
* I
C
=10mA,I
B
=0
Collector Emitter BreakdownVoltage
2N4030, 4032
2N4031, 4033
Collector Base Breakdown Voltage
2N4030, 4032
2N4031, 4033
Emitter Base Breakdown Voltage
Collector Leakage Current
2N4030, 4032
2N4030, 4032
2N4031, 4033
2N4031, 4033
Emitter Leakage Current
I
EBO
BV
CBO
I
C
=10µA, I
E
=0
MIN
60
80
MAX
UNITS
V
V
60
80
BV
EBO
I
CBO
I
E
=10µA, I
C
=0
V
CB
=50V, I
E
=0
V
CB
=50V, T
A
=150ºC
V
CB
=60V, I
E
=0
V
CB
=60V, T
A
=150ºC
V
EB
=5V, I
C
=0
50
50
50
50
10
5
V
V
V
nA
µA
nA
µA
µA
Continental Device India Limited
Data Sheet
Page 1 of 4

2N4030 Related Products

2N4030 2N4033 2N4031 2N4032
Description 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 RF SMALL SIGNAL TRANSISTOR 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
state ACTIVE ACTIVE ACTIVE Contact Mfr
Number of terminals 3 3 - 3
Maximum collector current 1 A 1 A - 1 A
Maximum Collector-Emitter Voltage 80 V 80 V - 60 V
Processing package description TO-39, 3 PIN TO-39, 3 PIN - TO-5, 3 PIN
packaging shape round round - ROUND
Package Size cylindrical cylindrical - CYLINDRICAL
Terminal form Wire Wire - WIRE
terminal coating NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Terminal location BOTTOM BOTTOM - BOTTOM
Packaging Materials Metal Metal - METAL
structure single single - SINGLE
Number of components 1 1 - 1
Transistor component materials silicon silicon - SILICON
Transistor type Universal small signal Universal small signal RF SMALL SIGNAL -
Minimum DC amplification factor 70 70 - 100
Rated crossover frequency 150 MHz 150 MHz - 100 MHz
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