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2N4032

Description
60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
Categorysemiconductor    Discrete semiconductor   
File Size148KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N4032 Overview

60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5

2N4032 Parametric

Parameter NameAttribute value
Maximum collector current1 A
Maximum Collector-Emitter Voltage60 V
Number of terminals3
Maximum off time400 ns
Maximum on-time100 ns
Processing package descriptionTO-5, 3 PIN
stateContact Mfr
structureSINGLE
Minimum DC amplification factor100
jedec_95_codeTO-5
jesd_30_codeO-MBCY-W3
Number of components1
Maximum operating temperature175 Cel
Packaging MaterialsMETAL
packaging shapeROUND
Package SizeCYLINDRICAL
larity_channel_typePNP
wer_dissipation_max__abs_0.8000 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountNO
terminal coatingNOT SPECIFIED
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Rated crossover frequency100 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR TRANSISTORS
2N4030, 2N4031
2N4032, 2N4033
TO-39
Metal Can Package
2N4030 And 2N4033 ARE PNP SMALL SIGNAL GENERAL PURPOSE
AMLIFIER, TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
2N4030,32
V
CEO
60
Collector Emitter Voltage
V
CBO
Collector Base Voltage
60
Emitter Base Voltage
Collector Current
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
V
EBO
I
CM
P
D
P
D
T
j
, T
stg
5
1
800
4.6
4
22.85
-65 to +200
2N4031, 33
80
80
UNITS
V
V
V
A
mW
mW/ºC
W
mW/ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
BV
CEO
* I
C
=10mA,I
B
=0
Collector Emitter BreakdownVoltage
2N4030, 4032
2N4031, 4033
Collector Base Breakdown Voltage
2N4030, 4032
2N4031, 4033
Emitter Base Breakdown Voltage
Collector Leakage Current
2N4030, 4032
2N4030, 4032
2N4031, 4033
2N4031, 4033
Emitter Leakage Current
I
EBO
BV
CBO
I
C
=10µA, I
E
=0
MIN
60
80
MAX
UNITS
V
V
60
80
BV
EBO
I
CBO
I
E
=10µA, I
C
=0
V
CB
=50V, I
E
=0
V
CB
=50V, T
A
=150ºC
V
CB
=60V, I
E
=0
V
CB
=60V, T
A
=150ºC
V
EB
=5V, I
C
=0
50
50
50
50
10
5
V
V
V
nA
µA
nA
µA
µA
Continental Device India Limited
Data Sheet
Page 1 of 4

2N4032 Related Products

2N4032 2N4033 2N4030 2N4031
Description 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 RF SMALL SIGNAL TRANSISTOR
state Contact Mfr ACTIVE ACTIVE ACTIVE
Maximum collector current 1 A 1 A 1 A -
Maximum Collector-Emitter Voltage 60 V 80 V 80 V -
Number of terminals 3 3 3 -
Processing package description TO-5, 3 PIN TO-39, 3 PIN TO-39, 3 PIN -
structure SINGLE single single -
Minimum DC amplification factor 100 70 70 -
Number of components 1 1 1 -
Packaging Materials METAL Metal Metal -
packaging shape ROUND round round -
Package Size CYLINDRICAL cylindrical cylindrical -
terminal coating NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Terminal form WIRE Wire Wire -
Terminal location BOTTOM BOTTOM BOTTOM -
Transistor component materials SILICON silicon silicon -
Rated crossover frequency 100 MHz 150 MHz 150 MHz -
Transistor type - Universal small signal Universal small signal RF SMALL SIGNAL
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