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2N4037

Description
1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
Categorysemiconductor    Discrete semiconductor   
File Size153KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
Download Datasheet Parametric View All

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2N4037 Overview

1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39

2N4037 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current1 A
Maximum Collector-Emitter Voltage40 V
Processing package descriptionTO-39, 3 PIN
stateACTIVE
packaging shapeROUND
Package SizeCYLINDRICAL
Terminal formWIRE
terminal coatingTIN LEAD
Terminal locationBOTTOM
Packaging MaterialsMETAL
structureSINGLE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption1 W
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor50
Rated crossover frequency60 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EXPITAXIAL TRANSISTOR.
2N4037
TO-39
Metal Can Package
MEDIUM POWER AMPLIFIER AND SWITCHING APPLICATIONS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
V
CEO(sus)
*
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Base Current
Continuous Power Dissipation
@ or Below Ta=25ºC
Linear Derating Dissipation
Operating And Storage Junction
Temperature Range
* Must not be tested on a curve tracer.
V
CBO
V
EBO
I
C
I
B
P
D
VALUE
40
60
7.0
1.0
0.5
1.0
5.72
-65 to +200
UNITS
V
V
V
A
A
W
mW/ºC
ºC
T
j
, T
stg
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
I
C
=100mA,I
B
=0
Collector Emitter susstaining Voltage
V
(BR)CEO(sus)
V
(BR)CBO
I
C
=100µA,I
E
=0
Collector Base Breakdown Voltage
V
CB
=60V, I
E
=0
I
CBO
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter (sat) Voltage
Base Emitter Voltage
DYNAMIC CHARACTERISTICS
DESCRIPTION
Collector Base Capacitance
Current Gain -High Frequency
I
EBO
hFE
V
CE(Sat)
V
BE(0n)
V
BE
=5V, I
C
=0
I
C
=1mA,V
CE
=10V
I
C
=150mA,V
CE
=10V
I
C
=150mA,I
B
=15mA
I
C
=150mA,V
CE
=10V
VALUE
>40
>60
<250
<20
>15
50-250
<1.4
<1.5
UNITS
V
V
nA
nA
V
V
SYMBOL
C
cb
| h
fe
|
TEST CONDITION
V
CB
= 10V, f=20MHz
I
C
=50mA, V
CE
=10V,
f=20MHz
VALUE
<30
3.0-1.0
UNITS
pF
Continental Device India Limited
Data Sheet
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