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2N5191

Description
4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
Categorysemiconductor    Discrete semiconductor   
File Size70KB,5 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N5191 Overview

4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126

2N5191 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current4 A
Maximum Collector-Emitter Voltage60 V
Processing package descriptionTO-126, 3 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption40 W
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor10
Rated crossover frequency2 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL SILICON POWER TRANSISTORS
2N5191
2N5192
TO126
Plastic Package
EC
B
Use in Medium Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Base Current
Total Dissipation @ T
C
<25 ºC
Junction Temperature
Storage Temperature Range
Thermal Resistance
Junction to Case
Junction to Ambient
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
stg
Rth(j-c)
Rth(j-a)
2N5191
60
60
5
4
7
1
40
150
-65 to 150
3.12
100
2N5192
80
80
UNIT
V
V
V
A
A
A
W
ºC
ºC
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
V
CEO*(sus)
I
C
=100mA, I
B
=0
Collector Emitter Sustaining Voltage
2N5191
2N5192
I
CBO
V
CB
=rated V
CBO,
I
E
=0
Collector Cut off Current
I
CEX
V
CE
=rated V
CEO
,
VBE=1.5V
V
CE
=rated V
CEO
,
V
BE
=1.5V,T
C
=125 ºC
I
CEO
I
EBO
V
CE(sat)*
V
BE
*
V
CE
=rated V
CEO
, I
B
=0
V
EB
=5V, I
C
=0
I
C
=1.5A, I
B
=0.15A
I
C
=4A, I
B
=1A
I
C
=1.5A, V
CE
=2V
MIN
60
80
-
-
TYP
-
-
-
-
MAX
-
-
0.1
0.1
UNIT
V
V
mA
mA
-
-
2
mA
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Voltage
-
-
-
-
-
-
-
-
-
-
1
1
0.6
1.4
1.2
mA
mA
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 4

2N5191 Related Products

2N5191 2N5192
Description 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
Number of terminals 3 3
Transistor polarity NPN NPN
Maximum collector current 4 A 4 A
Maximum Collector-Emitter Voltage 60 V 80 V
Processing package description TO-126, 3 PIN TO-126, 3 PIN
state ACTIVE ACTIVE
packaging shape RECTANGULAR Rectangle
Package Size FLANGE MOUNT Flange mounting
Terminal form THROUGH-HOLE THROUGH-hole
terminal coating TIN LEAD tin lead
Terminal location SINGLE single
Packaging Materials PLASTIC/EPOXY Plastic/Epoxy
structure SINGLE single
Number of components 1 1
Transistor component materials SILICON silicon
Transistor type GENERAL PURPOSE POWER universal power supply
Minimum DC amplification factor 10 20
Rated crossover frequency 2 MHz 2 MHz
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