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2N5192

Description
4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
Categorysemiconductor    Discrete semiconductor   
File Size70KB,5 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N5192 Overview

4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126

2N5192 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current4 A
Maximum Collector-Emitter Voltage80 V
Processing package descriptionTO-126, 3 PIN
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingtin lead
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
Transistor component materialssilicon
Transistor typeuniversal power supply
Minimum DC amplification factor20
Rated crossover frequency2 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL SILICON POWER TRANSISTORS
2N5191
2N5192
TO126
Plastic Package
EC
B
Use in Medium Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Base Current
Total Dissipation @ T
C
<25 ºC
Junction Temperature
Storage Temperature Range
Thermal Resistance
Junction to Case
Junction to Ambient
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
stg
Rth(j-c)
Rth(j-a)
2N5191
60
60
5
4
7
1
40
150
-65 to 150
3.12
100
2N5192
80
80
UNIT
V
V
V
A
A
A
W
ºC
ºC
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
V
CEO*(sus)
I
C
=100mA, I
B
=0
Collector Emitter Sustaining Voltage
2N5191
2N5192
I
CBO
V
CB
=rated V
CBO,
I
E
=0
Collector Cut off Current
I
CEX
V
CE
=rated V
CEO
,
VBE=1.5V
V
CE
=rated V
CEO
,
V
BE
=1.5V,T
C
=125 ºC
I
CEO
I
EBO
V
CE(sat)*
V
BE
*
V
CE
=rated V
CEO
, I
B
=0
V
EB
=5V, I
C
=0
I
C
=1.5A, I
B
=0.15A
I
C
=4A, I
B
=1A
I
C
=1.5A, V
CE
=2V
MIN
60
80
-
-
TYP
-
-
-
-
MAX
-
-
0.1
0.1
UNIT
V
V
mA
mA
-
-
2
mA
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Voltage
-
-
-
-
-
-
-
-
-
-
1
1
0.6
1.4
1.2
mA
mA
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 4

2N5192 Related Products

2N5192 2N5191
Description 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
Number of terminals 3 3
Transistor polarity NPN NPN
Maximum collector current 4 A 4 A
Maximum Collector-Emitter Voltage 80 V 60 V
Processing package description TO-126, 3 PIN TO-126, 3 PIN
state ACTIVE ACTIVE
packaging shape Rectangle RECTANGULAR
Package Size Flange mounting FLANGE MOUNT
Terminal form THROUGH-hole THROUGH-HOLE
terminal coating tin lead TIN LEAD
Terminal location single SINGLE
Packaging Materials Plastic/Epoxy PLASTIC/EPOXY
structure single SINGLE
Number of components 1 1
Transistor component materials silicon SILICON
Transistor type universal power supply GENERAL PURPOSE POWER
Minimum DC amplification factor 20 10
Rated crossover frequency 2 MHz 2 MHz

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