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2N5232

Description
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
File Size180KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N5232 Overview

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N5232
2N5232A
TO-92
Plastic Package
ABSOLUTE MAXIMUM RATINGS(T
a
=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ T
a
=25ºC
Storage Temperature
Junction Temperature
Lead Soldering, 1/16" + 1/32" from
Case for 10 seconds maximum
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
T
(1)
VALUE
50
70
5
100
360
- 55 to +150
+125
+260
UNITS
V
V
V
mA
mW
ºC
ºC
ºC
T
stg
T
j
T
L
ABSOLUTE MAXIMUM RATINGS(T
a
=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut
Off
Current
SYMBOL
BV
CEO**
BV
CBO
BV
EBO
I
CBO
TEST CONDITION
I
C
=10mA, I
B
=0
I
C
=10µA, I
E
=0
I
E
=10µA, I
C
=0
V
CB
=50V, I
E
= 0
T
a
= 100ºC
V
CB
=50V, I
E
= 0
Collector Cut
Off
Current
Emitter Cut
Off
Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter
On
Voltage
DC Current Gain
I
CES
I
EBO
V
CE(sat) (2)
V
BE(sat)
V
BE(on)
h
FE
(2)
MIN
50
70
5
TYP
MAX
UNITS
V
V
V
30
nA
10
30
50
0.125
0.780
0.5
170
250
(3)
µA
nA
nA
V
V
V
V
CE
=50V, V
BE
= 0
V
EB
=5V, I
C
= 0
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=10V, I
C
=2mA
V
CE
=5V, I
C
=0.1mA
V
CE
=5V, I
C
=2mA
0.900
500
(1) Derate by 3.6mW/ºC in case of increase in ambient temperature above 25ºC
(2) Pulse conditions: 300µs duration, 2% duty cycle.
(3)Typically, a minimum of 95% of the distribution is above this value.
Continental Device India Limited
Data Sheet
Page 1 of 4

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