Memory ICs
1, 2, and 4k bit EEPROMs for direct
connection to serial ports
BR9010 / BR9010F / BR9010FV / BR9020 /
BR9020F / BR9040 / BR9040F
Features
•
•BR9010 / F / FV (1k bit): 64 words
×
16 bits
BR9020 / F (2k bit): 128 words
×
16 bits
BR9040 / F (4k bit): 256 words
×
16 bits
•Single power supply operation
•Serial data input and output
•Automatic erase-before-write
•Low current consumption
–1.5mA (max.) active current: 3V
–2µA (max.) standby current: 3V
•Noise filter built into SK pin
•Compact DIP8, SOP8, SSOP-B8 packages (SSOP-
B8 is available only with BR9010).
•100,000 ERASE / WRITE cycles
•10 years Data Retention
•Easily connects to serial port
•
Pin assignments
CS
SK
DI
DO
1
2
3
4
8
7
6
5
V
CC
R / B
∗
1
R / B
∗
V
CC
2
WC
GND
CS
SK
3
4
8
WC
GND
DO
DI
BR9010 /
BR9020 / 9040
BR9010F /
BR9010FV /
BR9020F /
BR9040F
7
6
5
∗
This pin is N.C. (non connection) on BR9010.
•
Pin description
Pin
name
CS
SK
DI
DO
GND
WC
R /B
V
CC
Chip select input
Serial data clock input
Operating code, address, and serial data input
Serial data output
Reference voltage for all I / O, 0V
Write control input
READY, BUSY status signal output
Power supply connection
Function
•
Overviewseries are serial EEPROMs that can be connected directly to a serial port and can be erased and written
The BR90
electrically. Writing and reading is performed in word units, using four types of operation commands. Communication
occurs through CS, SK, DI, and DO pins, WC pin control is used to initiate a write disabled state, enabling these
EEPROMs to be used as one-time ROMs. During writing, operation is checked via the internal status check.
1
Memory ICs
BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F /
BR9040 / BR9040F
•
Block diagram
BR9010 / F / FV
CS
Command decode
Control
SK
Clock generation
Write
disable
High voltage
generator
WC
Power supply
voltage detector
DI
Command
register
Address
buffer
6bit
Address
decoder
6bit
1024bit
EEPROM
DO
Data
register
16bit
R/W
amplifier
array
16bit
BR9020 / F, BR9040 / F
R/B
CS
Command decode
Control
SK
Clock generation
Write
disable
Power supply
voltage detector
High voltage
generator
WC
DI
Command
register
Address
buffer
7 (8)
bit
Address
decoder
7 (8)
bit
2,048
(4,096) bit
EEPROM
DO
Data
register
16bit
R/W
amplifier
16bit
array
∗
Values in parentheses are for the BR9040 / F.
2
Memory ICs
BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F /
BR9040 / BR9040F
•
Absolute maximum ratings (Ta = 25°C)
Parameter
Applied voltage
Symbol
V
CC
Limits
– 0.3 ~ + 7.0
DIP8
Power dissipation
P
d
SOP8
SSOP-B8
Storage temperature
Operation temperature
Input voltage
T
stg
T
opr
—
500
∗
1
350
∗
2
300
∗
3
°C
°C
V
mW
Unit
V
– 65 ~ + 125
– 40 ~ + 85
– 0.3 ~ V
CC
+ 0.3
for each increase in Ta of 1°C over 25°C.
∗
Reduced by 5.0mw
∗
1
/ 3.5mw
∗
2
/ 3.0mw
∗
3
•
Recommended operating conditions
Parameter
Power supply voltage
Input voltage
Symbol
V
CC
V
IN
Limits
2.7 to 5.5 (write)
2.0 to 5.5 (read)
0 ~ V
CC
Unit
V
V
V
3
Memory ICs
BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F /
BR9040 / BR9040F
•
ElectricalF characteristics otherwise noted, Ta = – 40 to + 85°C, V
BR9010 / / FV: At 5V (unless
Parameter
Input low level voltage 1
Symbol
V
IL1
Min.
—
0.7
×
V
CC
Input low level voltage 2
V
IL2
—
0.8
×
V
CC
Output low level voltage
Output high level voltage
V
OL
V
OH
0
V
CC
–
0.4
Input leak current
Output leak current
Consumption current
during operation
Standby current
SK frequency
I
LI
I
LO
I
CC1
I
CC2
I
SB
f
SK
–1
–1
—
—
—
—
—
—
—
—
—
—
1
1
2
1
3
1
µA
µA
mA
mA
µA
—
—
0.4
V
CC
V
V
—
0.2
×
V
CC
Input high level voltage 2
V
IH2
—
—
V
V
Typ.
—
Max.
0.3
×
V
CC
Input high level voltage 1
V
IH1
—
—
V
Unit
V
CC
= 5V ± 10%)
Conditions
DI Pin
DI Pin
CS, SK, WC Pin
CS, SK, WC Pin
I
OL
= 2.1mA
I
OH
= – 0.4mA
V
IN
= 0V ~ V
CC
V
OUT
= 0V ~ V
CC
CS = V
CC
f = 1MHz tE / W = 10ms (WRITE)
f = 1MHz (READ)
CS, SK, DI, WC, = V
CC
DO = OPEN
—
MHz
BR9010 / F / FV: At 3V (unless otherwise noted, Ta = – 40 to + 85°C, V
CC
= 3V ± 10%)
Parameter
Input low level voltage 1
Symbol
V
IL1
Min.
—
0.7
×
V
CC
Input low level voltage 2
V
IL2
—
0.8
×
V
CC
Output low level voltage
Output high level voltage
V
OL
V
OH
0
V
CC
–
0.4
Input leak current
Output leak current
Consumption current
during operation
Standby current
SK frequency
Not designed for radiation resistance
Typ.
—
Max.
0.3
×
V
CC
Unit
V
DI Pin
Conditions
Input high level voltage 1
V
IH1
—
—
0.2
×
V
CC
V
DI Pin
—
V
CS, SK, WC Pin
Input high level voltage 2
V
IH2
—
—
V
CS, SK, WC Pin
—
—
0.4
V
CC
V
V
µA
µA
mA
µA
µA
MHz
I
OL
= 100µA
I
OH
= – 100µA
I
LI
I
LO
I
CC1
I
CC2
I
SB
f
SK
–1
–1
—
—
—
—
—
—
—
—
—
—
1
1
1.5
500
2
1
V
IN
= 0 ~ V
CC
V
OUT
= 0 ~ V
CC
CS = V
CC
f = 1MHz tE / W = 15ms (WRITE)
f = 1MHz (READ)
CS, SK, DI, WC, = V
CC
DO = OPEN
—
4
Memory ICs
BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F /
BR9040 / BR9040F
•
Electrical/ characteristics otherwise noted, Ta = – 40 to + 85°C, V
•
BR9020 F: At 5V (unless
Parameter
Input low level voltage 1
Input high level voltage 1
Input low level voltage 2
Input high level voltage 2
Output low level voltage
Output high level voltage
Input leak current
Output leak current
Consumption current
during operation
Standby current
SK frequency
Symbol
V
IL1
V
IH1
V
IL2
V
IH2
V
OL
V
OH
I
LI
I
LO
I
CC1
I
CC2
I
SB
f
SK
Min.
—
0.7
×
V
CC
—
0.8
×
V
CC
0
V
CC
– 0.4
–1
–1
—
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
Max.
0.3
×
V
CC
—
0.2
×
V
CC
—
0.4
V
CC
1
1
2
1
3
1
CC
= 5V ± 10%)
Conditions
DI Pin
DI Pin
CS, SK, WC Pin
CS, SK, WC Pin
I
OL
= 2.1mA
I
OH
= – 0.4mA
V
IN
= 0V ~ V
CC
V
OUT
= 0V ~ V
CC
CS = V
CC
f
SK
= 1MHz tE / W = 10ms (WRITE)
f
SK
= 1MHz (READ)
CS, SK, DI, WC, = V
CC
DO, R / B = OPEN
—
Unit
V
V
V
V
V
V
µA
µA
mA
mA
µA
MHz
•
BR9020 / F: At 3V (unless otherwise noted, Ta = – 40 to + 85°C, V
Parameter
Input low level voltage 1
Input high level voltage 1
Input low level voltage 2
Input high level voltage 2
Output low level voltage
Output high level voltage
Input leak current
Output leak current
Consumption current
during operation
Standby current
SK frequency
Symbol
V
IL1
V
IH1
V
IL2
V
IH2
V
OL
V
OH
I
LI
I
LO
I
CC1
I
CC2
I
SB
f
SK
Min.
—
0.7
×
V
CC
—
0.8
×
V
CC
0
V
CC
– 0.4
–1
–1
—
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
Max.
0.3
×
V
CC
—
0.2
×
V
CC
—
0.4
V
CC
1
1
1.5
500
2
1
CC
= 3V ± 10%)
Conditions
DI Pin
DI Pin
CS, SK, WC Pin
CS, SK, WC Pin
I
OL
= 100µA
I
OH
= – 100µA
V
IN
= 0V ~ V
CC
V
OUT
= 0V ~ V
CC
CS = V
CC
f
SK
= 1MHz tE / W = 15ms (WRITE)
f
SK
= 1MHz (READ)
CS, SK, DI, WC, = V
CC
DO, R / B = OPEN
—
Unit
V
V
V
V
V
V
µA
µA
mA
µA
µA
MHz
5