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2N6520

Description
RF SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size166KB,5 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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2N6520 Overview

RF SMALL SIGNAL TRANSISTOR

2N6520 Parametric

Parameter NameAttribute value
stateActive
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N6515, 2N6519
2N6516, 2N6520
2N6517
TO-92
Plastic Package
HIGH VOLTAGE TRANSISTORS
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
2N6515 2N6516 2N6517
2N6519 2N6520
V
CEO
250
300
350
Collector Emitter Voltage
V
CBO
Collector Base Voltage
250
300
350
V
EBO
NPN-------------------6------------------
Emitter Base Voltage
PNP-------------------5------------------
I
C
Collector Current Continuous
500
I
B
Base Current (Continuous)
250
Total Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to ambient
Junction to case
P
D
T
stg
625
5.0
-55 to +150
UNIT
V
V
V
V
mA
mA
mW
mW/ºC
ºC
R
th(j-a)
R
th(j-c)
200
83.3
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Breakdown Voltage
BV
CEO
* I
C
=1mA,I
B
=0
2N6515
2N6516, 6519
2N6517, 6520
MIN
250
300
350
MAX
UNIT
V
V
V
Collector Base Breakdown Voltage
2N6515
2N6516, 6519
2N6517, 6520
Emitter Base Breakdown Voltage
NPN
PNP
BV
CBO
I
C
=100µA,I
E
=0
250
300
350
BV
EBO
I
E
=10µA, I
C
=0
6
5
V
V
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 5

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