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IRF520NSTRR

Description
Advanced Process Technology
CategoryDiscrete semiconductor    The transistor   
File Size209KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRF520NSTRR Overview

Advanced Process Technology

IRF520NSTRR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionPLASTIC, D2PAK-3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresAVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)91 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)9.7 A
Maximum drain current (ID)9.7 A
Maximum drain-source on-resistance0.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)48 W
Maximum pulsed drain current (IDM)38 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD -91340A
IRF520NS/L
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Surface Mount (IRF520NS)
Low-profile through-hole (IRF520NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
V
DSS
= 100V
R
DS(on)
= 0.20Ω
G
S
I
D
= 9.7A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF520NL) is available for low-profile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V…
Continuous Drain Current, V
GS
@ 10V…
Pulsed Drain Current
…
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
9.7
6.8
38
3.8
48
0.32
± 20
91
5.7
4.8
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
3.1
40
Units
°C/W
5/13/98

IRF520NSTRR Related Products

IRF520NSTRR IRF520NL
Description Advanced Process Technology Advanced Process Technology
Is it Rohs certified? incompatible incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction PLASTIC, D2PAK-3 IN-LINE, R-PSIP-T3
Contacts 3 3
Reach Compliance Code unknown compliant
ECCN code EAR99 EAR99
Other features AVALANCHE RATED, HIGH RELIABILITY AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas) 91 mJ 91 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V
Maximum drain current (Abs) (ID) 9.7 A 9.7 A
Maximum drain current (ID) 9.7 A 9.7 A
Maximum drain-source on-resistance 0.2 Ω 0.2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSIP-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) 225 225
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 48 W 48 W
Maximum pulsed drain current (IDM) 38 A 38 A
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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