®
LY62L12916
Rev. 0.4
128K X 16 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 0.1
Rev. 0.2
Rev. 0.3
Description
Initial Issue
Revised Package Outline Dimension(TSOP-II)
Revised
FEATURES
&
ORDERING INFORMATION
Lead free and green package available
to
Green package
available
Added packing type in
ORDERING INFORMATION
Revised V
TERM
to V
T1
and V
T2
Deleted T
SOLDER
in
ABSOLUTE MAXIMUN RATINGS
Revised Test Condition of I
SB1
/I
DR
Added I
SB1
/I
DR
values when T
A
= 25
℃
and T
A
= 40
℃
Added SL grade
Deleted L grade
Issue Date
May.20.2005
Apr.12.2007
Apr.17.2009
Rev. 0.4
Jun.15.2009
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
LY62L12916
Rev. 0.4
128K X 16 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The LY62L12916 is a 2,097,152-bit low power
CMOS static random access memory organized as
131,072 words by 16 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY62L12916 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY62L12916 operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
FEATURES
Fast access time : 45/55/70ns
Low power consumption:
Operating current : 23/20/18mA (TYP.)
Standby current : 1μA (TYP.) LL/SL -version
Single 2.7V ~ 3.6V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
48-pin 12mm x 20mm TSOP-I
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
LY62L12916
LY62L12916(E)
LY62L12916(I)
Operating
Temperature
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
Vcc Range
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
Speed
45/55/70ns
45/55/70ns
45/55/70ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
1µA
23/20/18mA
1µA
23/20/18mA
1µA
23/20/18mA
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
PIN DESCRIPTION
SYMBOL
A0 – A16
DESCRIPTION
Address Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
DQ0 – DQ15 Data Inputs/Outputs
A0-A16
DECODER
128Kx16
MEMORY ARRAY
CE#,CE2
WE#
OE#
LB#
UB#
V
CC
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
I/O DATA
CIRCUIT
COLUMN I/O
V
SS
CE#
CE2
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY62L12916
Rev. 0.4
128K X 16 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
A4
A3
A2
A1
A0
CE#
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE#
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
44
43
42
41
40
39
38
A5
A6
A7
OE#
UB#
LB#
DQ15
DQ14
DQ13
DQ12
Vss
Vcc
DQ11
DQ10
DQ9
DQ8
CE2
A8
A9
A10
A11
NC
LY62L12916
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
B
C
D
E
F
G
H
LB# OE#
DQ8 UB#
A0
A3
A1
A4
A6
A7
A2
CE2
CE# DQ0
DQ1 DQ2
DQ3 Vcc
DQ9 DQ10 A5
Vss DQ11 NC
Vcc DQ12 NC
DQ14 DQ13 A14
DQ15 NC
NC
A8
A12
A9
A16 DQ4 Vss
A15 DQ5 DQ6
A13 WE# DQ7
A10
A11
NC
1
TSOP II
2
3
4
TFBGA
5
6
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
CE2
NC
UB#
LB#
NC
NC
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
LY62L12916
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
NC
Vss
DQ15
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
Vcc
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
Vss
CE#
A0
TSOP I
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY62L12916
Rev. 0.4
128K X 16 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 4.6
-0.5 to V
CC
+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
CE#
H
X
X
L
L
L
L
L
L
L
L
CE2
X
L
X
H
H
H
H
H
H
H
H
OE#
X
X
X
H
H
L
L
L
X
X
X
WE# LB#
X
X
X
H
H
H
H
H
L
L
L
X
X
H
L
X
L
H
L
L
H
L
UB#
X
X
H
X
L
H
L
L
H
L
L
I/O OPERATION
SUPPLY CURRENT
DQ0-DQ7
DQ8-DQ15
High – Z
High – Z
I
SB
,I
SB1
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
I
CC
,I
CC1
High – Z
High – Z
High – Z
D
OUT
I
CC
,I
CC1
High – Z
D
OUT
D
OUT
D
OUT
High – Z
D
IN
I
CC
,I
CC1
High – Z
D
IN
D
IN
D
IN
Write
Note:
H = V
IH
, L = V
IL
, X = Don't care.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
®
LY62L12916
Rev. 0.4
128K X 16 BIT LOW POWER CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
V
CC
*1
Input High Voltage
V
IH
*2
Input Low Voltage
V
IL
Input Leakage Current
I
LI
V
CC
≧
V
IN
≧
V
SS
Output Leakage
V
CC
≧
V
OUT
≧
V
SS
,
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -1mA
Output Low Voltage
V
OL
I
OL
= 2mA
Cycle time = Min.
- 45
CE# = V
IL
and CE2 = V
IH
,
- 55
I
CC
I
I/O
= 0mA
- 70
Other pins at V
IL
or V
IH
Average Operating
Power supply Current
Cycle time = 1µs
CE#
≦
0.2V and CE2
≧
V
CC
-0.2V,,
I
CC1
I
I/O
= 0mA
other pins at 0.2V or V
CC
-0.2V
CE# = V
IH
or CE2 = V
IL
I
SB
other pins at V
IL
or V
IH
LL
LLE/LLI
CE#
≧
V
CC
-0.2V
Standby Power
*5
SL
25℃
Supply Current
≦
0.2V
or CE2
*5
I
SB1
SLE
Other pins at 0.2V
*5
40℃
SLI
or V
CC
- 0.2V
SL
SLE/SLI
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
5. This parameter is measured at V
CC
= 3.0V
MIN.
2.7
2.2
- 0.2
-1
-1
2.2
-
-
-
-
TYP.
3.0
-
-
-
-
2.7
-
23
20
18
*4
MAX.
3.6
V
CC
+0.3
0.6
1
1
-
0.4
40
35
30
UNIT
V
V
V
µA
µA
V
V
mA
mA
mA
-
4
5
mA
-
-
-
-
-
-
-
0.3
1
1
1
1
1
1
0.5
10
20
3
3
10
15
mA
µA
µA
µA
µA
µA
µA
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
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