NTTFS4943N datasheet, PDF - EEWORLD Datasheet

NTTFS4943N

Power MOSFET

Features

30 V, 41 A, Single N−Channel,

m8FL

•

Low R

DS(on)

to Minimize Conduction Losses

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

DC−DC Converters

Power Load Switch

Notebook Battery Management

Motor Control

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

qJA

(Note 1)

Power Dissipation R

qJA

(Note 1)

Continuous Drain

Current R

qJA

≤

10 s

(Note 1)

Power Dissipation

R

qJA

≤

10 s (Note 1)

Continuous Drain

Current R

qJA

(Note 2)

Power Dissipation

R

qJA

(Note 2)

Continuous Drain

Current R

qJC

(Note 1)

Power Dissipation

R

qJC

(Note 1)

Pulsed Drain Current

Steady

State

T

A

= 25°C

T

A

= 85°C

T

A

= 25°C

T

A

= 25°C

T

A

= 85°C

T

A

= 25°C

T

A

= 25°C

T

A

= 85°C

T

A

= 25°C

T

C

= 25°C

T

C

= 85°C

T

C

= 25°C

T

A

= 25°C, t

p

= 10

ms

P

D

I

DM

T

J

,

T

stg

I

S

dV/dt

E

AS

P

D

I

D

P

D

I

D

P

D

I

D

Symbol

V

DSS

V

GS

I

D

Value

30

±20

12.7

9.2

2.17

18

13

4.35

8.0

5.7

0.84

41

29

22.3

125

−55

to

+150

25

6.0

31

W

A

°C

A

V/ns

mJ

NTTFS4943NTWG

W

A

W

A

4943

A

Y

WW

G

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

W

Unit

V

A

S (1,2,3)

G (4)

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V

(BR)DSS

30 V

R

DS(on)

MAX

7.2 mW @ 10 V

11 mW @ 4.5 V

I

D

MAX

41 A

Applications

N−Channel MOSFET

D (5−8)

MAXIMUM RATINGS

(T

J

= 25°C unless otherwise stated)

MARKING DIAGRAM

A

1

WDFN8

(m8FL)

CASE 511AB

S

G

4943

AYWWG

G

D

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device

NTTFS4943NTAG

Package

Shipping

†

WDFN8 1500/Tape & Reel

(Pb−Free)

WDFN8 5000/Tape & Reel

(Pb−Free)

Operating Junction and Storage Temperature

Source Current (Body Diode)

Drain to Source dV/dt

Single Pulse Drain−to−Source Avalanche Energy

(T

J

= 25°C, V

DD

= 50 V, V

GS

= 10 V,

I

L

= 25 A

pk

, L = 0.1 mH, R

G

= 25

W)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

T

L

260

°C

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

©

Semiconductor Components Industries, LLC, 2011

January, 2011

−

Rev. 1

1

Publication Order Number:

NTTFS4943N/D

NTTFS4943N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Junction−to−Case (Drain)

Junction−to−Ambient – Steady State (Note 3)

Junction−to−Ambient – Steady State (Note 4)

Junction−to−Ambient – (t

≤

10 s) (Note 3)

3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm

2

, 1 oz. Cu).

Symbol

R

qJC

R

qJA

R

qJA

R

qJA

Value

5.6

57.5

149.2

28.7

Unit

°C/W

ELECTRICAL CHARACTERISTICS

(T

J

= 25°C unless otherwise specified)

Parameter

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

Zero Gate Voltage Drain Current

V

(BR)DSS

V

(BR)DSS

/T

J

I

DSS

I

GSS

V

GS(TH)

V

GS(TH)

/T

J

R

DS(on)

I

D

= 20 A

I

D

= 10 A

I

D

= 20 A

I

D

= 10 A

V

GS

= 0 V,

V

DS

= 24 V

T

J

= 25°C

T

J

= 125°C

V

GS

= 0 V, I

D

= 250

mA

30

15

1.0

10

±100

nA

V

mV/°C

mA

Symbol

Test Condition

Min

Typ

Max

Unit

Gate−to−Source Leakage Current

ON CHARACTERISTICS

(Note 5)

Gate Threshold Voltage

Negative Threshold Temperature

Coefficient

Drain−to−Source On Resistance

V

DS

= 0 V, V

GS

=

±20

V

GS

= V

DS

, I

D

= 250

mA

1.2

4.0

5.1

7.6

7.5

29.3

2.2

V

mV/°C

V

GS

= 10 V

V

GS

= 4.5 V

7.2

mW

11

Forward Transconductance

CHARGES AND CAPACITANCES

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

Total Gate Charge

g

FS

C

iss

C

oss

C

rss

Q

G(TOT)

Q

G(TH)

Q

GS

Q

GD

Q

G(TOT)

t

d(on)

t

r

t

d(off)

t

f

V

DS

= 1.5 V, I

D

= 15 A

S

1386

V

GS

= 0 V, f = 1.0 MHz, V

DS

= 15 V

440

23

9.2

V

GS

= 4.5 V, V

DS

= 15 V, I

D

= 20 A

2.3

4.5

1.35

V

GS

= 10 V, V

DS

= 15 V, I

D

= 20 A

20.4

pF

nC

SWITCHING CHARACTERISTICS

(Note 6)

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

Fall Time

10.6

V

GS

= 4.5 V, V

DS

= 15 V,

I

D

= 15 A, R

G

= 3.0

W

21

17.7

2.96

ns

5. Pulse Test: pulse width = 300

ms,

duty cycle

v

2%.

6. Switching characteristics are independent of operating junction temperatures.

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2

NTTFS4943N

ELECTRICAL CHARACTERISTICS

(T

J

= 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS

(Note 6)

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

Fall Time

t

d(on)

t

r

t

d(off)

t

f

V

SD

t

RR

t

a

t

b

Q

RR

L

S

L

D

L

G

R

G

T

A

= 25°C

V

GS

= 0 V, d

IS

/d

t

= 100 A/ms,

I

S

= 20 A

T

J

= 25°C

T

J

= 125°C

V

GS

= 10 V, V

DS

= 15 V,

I

D

= 15 A, R

G

= 3.0

W

7.6

19.5

22

2.6

ns

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

GS

= 0 V,

I

S

= 20 A

0.88

0.78

26.2

13.2

13

17

nC

ns

1.2

V

Reverse Recovery Time

Charge Time

Discharge Time

Reverse Recovery Charge

PACKAGE PARASITIC VALUES

Source Inductance

Drain Inductance

Gate Inductance

Gate Resistance

0.38

0.054

1.3

1.1

2.0

nH

W

5. Pulse Test: pulse width = 300

ms,

duty cycle

v

2%.

6. Switching characteristics are independent of operating junction temperatures.

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3

NTTFS4943N

TYPICAL CHARACTERISTICS

70

60

I

D

, DRAIN CURRENT (A)

50

40

30

20

2.8 V

10

0

1

2

3

4

2.6 V

2.4 V

5

V

DS

, DRAIN−TO−SOURCE VOLTAGE (V)

60

55

I

D

, DRAIN CURRENT (A)

50

45

40

35

30

25

20

15

10

5

0

1.0

T

J

= 125°C

1.5

2.0

2.5

T

J

=

−55°C

3.0

3.5

4.0

T

J

= 25°C

10 V

4.5 V

4.0 V

T

J

= 25°C

3.6 V

3.4 V

3.2 V

3.0 V

V

DS

≥

10 V

V

GS

, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (W)

0.060

0.050

0.040

0.030

0.020

0.010

0.000

I

D

= 20 A

T

J

= 25°C

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (W)

0.010

Figure 2. Transfer Characteristics

T

J

= 25°C

0.009

0.008

0.007

0.006

V

GS

= 10 V

0.005

0.004

10

V

GS

= 4.5 V

2

3

4

5

6

7

8

9

10

20

30

40

50

60

70

80

90

100

V

GS

, GATE−TO−SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

Figure 3. On−Resistance vs. V

GS

1.9

1.8 I

D

= 20 A

1.7 V

GS

= 10 V

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

−50 −25

0

10,000

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

V

GS

= 0 V

T

J

= 150°C

R

DS(on)

, DRAIN−TO−SOURCE

RESISTANCE (NORMALIZED)

I

DSS

, LEAKAGE (nA)

1000

T

J

= 125°C

100

T

J

= 85°C

25

50

75

100

125

150

10

5

10

15

20

25

30

T

J

, JUNCTION TEMPERATURE (°C)

V

DS

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

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4

NTTFS4943N

TYPICAL CHARACTERISTICS

1800

1600

C, CAPACITANCE (pF)

1400

1200

1000

800

600

400

200

0

5

10

C

rss

15

20

25

30

V

DS

, DRAIN−TO−SOURCE VOLTAGE (V)

C

oss

C

iss

V

GS

= 0 V

T

J

= 25°C

11

10

9

8

7

6

5

4

3

2

1

0

Qgs

V

DD

= 15 V

V

GS

= 10 V

I

D

= 20 A

0

2

4

6

8

10

12

14

16

18

20

Qg, TOTAL GATE CHARGE (nC)

Qgd

T

J

= 25°C

V

GS

, GATE−TO−SOURCE VOLTAGE (V)

QT

Figure 7. Capacitance Variation

1000

I

S

, SOURCE CURRENT (A)

V

DD

= 15 V

I

D

= 15 A

V

GS

= 10 V

t, TIME (ns)

100

30

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

V

GS

= 0 V

25

20

15

10

5

0

0.4

T

J

= 25°C

0.5

0.6

0.7

0.8

0.9

1.0

t

d(off)

t

f

t

r

t

d(on)

T

J

= 125°C

10

1

10

R

G

, GATE RESISTANCE (W)

100

V

SD

, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

E

AS

, SINGLE PULSE DRAIN−TO−

SOURCE AVALANCHE ENERGY (mJ)

1000

40

Figure 10. Diode Forward Voltage vs. Current

I

D

= 25 A

30

I

D

, DRAIN CURRENT (A)

100

10

1

0.1

0.01

V

GS

= 20 V

Single Pulse

T

C

= 25°C

R

DS(on)

Limit

Thermal Limit

Package Limit

0.1

1

10

ms

100

ms

1 ms

10 ms

dc

20

10

100

0

25

50

75

100

125

150

V

DS

, DRAIN−TO−SOURCE VOLTAGE (V)

T

J

, STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

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NTTFS4943N

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