NTTFS4943N
Power MOSFET
Features
30 V, 41 A, Single N−Channel,
m8FL
•
•
•
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
DC−DC Converters
Power Load Switch
Notebook Battery Management
Motor Control
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation R
qJA
(Note 1)
Continuous Drain
Current R
qJA
≤
10 s
(Note 1)
Power Dissipation
R
qJA
≤
10 s (Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain Current
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C, t
p
= 10
ms
P
D
I
DM
T
J
,
T
stg
I
S
dV/dt
E
AS
P
D
I
D
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
12.7
9.2
2.17
18
13
4.35
8.0
5.7
0.84
41
29
22.3
125
−55
to
+150
25
6.0
31
W
A
°C
A
V/ns
mJ
NTTFS4943NTWG
W
A
W
A
4943
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
W
Unit
V
V
A
S (1,2,3)
G (4)
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V
(BR)DSS
30 V
R
DS(on)
MAX
7.2 mW @ 10 V
11 mW @ 4.5 V
I
D
MAX
41 A
Applications
N−Channel MOSFET
D (5−8)
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
MARKING DIAGRAM
A
1
1
WDFN8
(m8FL)
CASE 511AB
S
S
S
G
4943
AYWWG
G
D
D
D
D
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTTFS4943NTAG
Package
Shipping
†
WDFN8 1500/Tape & Reel
(Pb−Free)
WDFN8 5000/Tape & Reel
(Pb−Free)
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 25 A
pk
, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
©
Semiconductor Components Industries, LLC, 2011
January, 2011
−
Rev. 1
1
Publication Order Number:
NTTFS4943N/D
NTTFS4943N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t
≤
10 s) (Note 3)
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm
2
, 1 oz. Cu).
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
5.6
57.5
149.2
28.7
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
I
D
= 20 A
I
D
= 10 A
I
D
= 20 A
I
D
= 10 A
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
15
1.0
10
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.2
4.0
5.1
5.1
7.6
7.5
29.3
2.2
V
mV/°C
V
GS
= 10 V
V
GS
= 4.5 V
7.2
mW
11
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 1.5 V, I
D
= 15 A
S
1386
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 15 V
440
23
9.2
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 20 A
2.3
4.5
1.35
V
GS
= 10 V, V
DS
= 15 V, I
D
= 20 A
20.4
pF
nC
nC
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
10.6
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
21
17.7
2.96
ns
5. Pulse Test: pulse width = 300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS4943N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= 20 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
7.6
19.5
22
2.6
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 20 A
0.88
0.78
26.2
13.2
13
17
nC
ns
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
0.38
0.054
1.3
1.1
2.0
nH
W
5. Pulse Test: pulse width = 300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTTFS4943N
TYPICAL CHARACTERISTICS
70
60
I
D
, DRAIN CURRENT (A)
50
40
30
20
2.8 V
10
0
0
1
2
3
4
2.6 V
2.4 V
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
60
55
I
D
, DRAIN CURRENT (A)
50
45
40
35
30
25
20
15
10
5
0
1.0
T
J
= 125°C
1.5
2.0
2.5
T
J
=
−55°C
3.0
3.5
4.0
T
J
= 25°C
10 V
4.5 V
4.0 V
T
J
= 25°C
3.6 V
3.4 V
3.2 V
3.0 V
V
DS
≥
10 V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.060
0.050
0.040
0.030
0.020
0.010
0.000
I
D
= 20 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.010
Figure 2. Transfer Characteristics
T
J
= 25°C
0.009
0.008
0.007
0.006
V
GS
= 10 V
0.005
0.004
10
V
GS
= 4.5 V
2
3
4
5
6
7
8
9
10
20
30
40
50
60
70
80
90
100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
1.9
1.8 I
D
= 20 A
1.7 V
GS
= 10 V
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
−50 −25
0
10,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
1000
T
J
= 125°C
100
T
J
= 85°C
25
50
75
100
125
150
10
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTTFS4943N
TYPICAL CHARACTERISTICS
1800
1600
C, CAPACITANCE (pF)
1400
1200
1000
800
600
400
200
0
0
5
10
C
rss
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
11
10
9
8
7
6
5
4
3
2
1
0
Qgs
V
DD
= 15 V
V
GS
= 10 V
I
D
= 20 A
0
2
4
6
8
10
12
14
16
18
20
Qg, TOTAL GATE CHARGE (nC)
Qgd
T
J
= 25°C
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
QT
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t, TIME (ns)
100
30
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
25
20
15
10
5
0
0.4
T
J
= 25°C
0.5
0.6
0.7
0.8
0.9
1.0
t
d(off)
t
f
t
r
t
d(on)
T
J
= 125°C
10
1
1
10
R
G
, GATE RESISTANCE (W)
100
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
40
Figure 10. Diode Forward Voltage vs. Current
I
D
= 25 A
30
I
D
, DRAIN CURRENT (A)
100
10
1
0.1
0.01
0.01
V
GS
= 20 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
10
ms
100
ms
1 ms
10 ms
dc
20
10
100
0
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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