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SSM6N35FE

Description
Field-Effect Transistor Silicon N-Channel MOS Type
CategoryDiscrete semiconductor    The transistor   
File Size194KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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SSM6N35FE Overview

Field-Effect Transistor Silicon N-Channel MOS Type

SSM6N35FE Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)0.18 A
Maximum drain-source on-resistance4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F6
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
SSM6N35FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N35FE
High-Speed Switching Applications
Analog Switch Applications
Unit: mm
1.6±0.05
1.2±0.05
1.2-V drive
1.6±0.05
N-ch 2-in-1
Low ON-resistance: R
on
= 20
(max) (@V
GS
= 1.2 V)
: R
on
= 8
(max) (@V
GS
= 1.5 V)
: R
on
= 4
(max) (@V
GS
= 2.5 V)
: R
on
= 3
(max) (@V
GS
= 4.0 V)
1.0±0.05
0.5 0.5
1
2
3
6
5
4
0.2±0.05
0.12±0.05
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
20
±10
180
360
150
150
−55
to 150
Unit
V
V
mA
mW
°C
°C
0.55±0.05
1.Source1
4.Source2
5.Gate2
6.Drain1
ES6
JEDEC
JEITA
TOSHIBA
2.Gate1
3.Drain2
-
-
2-2N1A
Weight: 3.0 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease
in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
2
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 0.135 mm
×
6)
Marking
6
5
4
Equivalent Circuit
(top view)
6
5
4
KZ
1
2
3
1
Q1
Q2
2
3
1
2008-03-10
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