SST29VE010A-120-4I-E datasheet, PDF

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SST29VE010A-120-4I-E: Description1 Megabit (128K x 8) Page Mode EEPROM; File Size254KB，26 Pages; ManufacturerSST; Websitehttp://www.ssti.com

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SST29VE010A-120-4I-E Overview

1 Megabit (128K x 8) Page Mode EEPROM

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1 Megabit (128K x 8) Page Mode EEPROM

SST29EE010A / SST29LE010A / SST29VE010A

Data Sheet

FEATURES:

• Single Voltage Read and Write Operations

– 5.0V-only for the SST29EE010A

– 3.0-3.6V for the SST29LE010A

– 2.7-3.6V for the SST29VE010A

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

– Active Current: 20 mA (typical) for 5V and

10 mA (typical) for 3.0/2.7V

– Standby Current: 10 µA (typical)

• Fast Page Write Operation

– 128 Bytes per Page, 1024 Pages

– Page Write Cycle: 5 ms (typical)

– Complete Memory Rewrite: 5 sec (typical)

– Effective Byte Write Cycle Time: 39 µs

(typical)

• Fast Read Access Time

– 5.0V-only operation: 90 and 120 ns

– 3.0-3.6V operation: 150 and 200 ns

– 2.7-3.6V operation: 200 and 250 ns

• Latched Address and Data

• Automatic Write Timing

– Internal V

Generation

• End of Write Detection

– Toggle Bit

– Data# Polling

• Hardware and Software Data Protection

• TTL I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 32 Pin PDIP

– 32-Pin PLCC

– 32-Pin TSOP (8mm x 20mm & 8mm x 14mm)

updating of program, configuration, or data memory. For

all system applications, the SST29EE010A/29LE010A/

29VE010A significantly improve performance and reli-

ability, while lowering power consumption. The

SST29EE010A/29LE010A/29VE010A improve flexibil-

ity while lowering the cost for program, data, and configu-

ration storage applications.

To meet high density, surface mount requirements, the

SST29EE010A/29LE010A/29VE010A are offered in 32-

pin TSOP and 32-lead PLCC packages. A 600-mil, 32-

pin PDIP package is also available. See Figures 1 and 2

for pinouts.

Device Operation

The SST page mode EEPROM offers in-circuit electrical

write capability. The SST29EE010A/29LE010A/

29VE010A does not require separate Erase and

Program operations. The internally timed write cycle

executes both erase and program transparently to the

user. The SST29EE010A/29LE010A/29VE010A have

industry standard Software Data Protection. The

SST29EE010A/29LE010A/29VE010A are compatible

with industry standard EEPROM pinouts and

functionality.

Read

The Read operations of the SST29EE010A/29LE010A/

29VE010A are controlled by CE# and OE#, both have to

be low for the system to obtain data from the outputs.

PRODUCT DESCRIPTION

The SST29EE010A/29LE010A/29VE010A are 128K x 8

CMOS Page Write EEPROMs manufactured with SST’s

proprietary, high performance CMOS SuperFlash tech-

nology. The split-gate cell design and thick oxide tunnel-

ing injector attain better reliability and manufacturability

compared with alternate approaches. The

SST29EE010A/29LE010A/29VE010A write with a

single power supply. Internal Erase/Program is transpar-

ent to the user. The SST29EE010A/29LE010A/

29VE010A conform to JEDEC standard pinouts for byte-

wide memories.

Featuring high performance page write, the

SST29EE010A/29LE010A/29VE010A provide a typical

byte-write time of 39 µsec. The entire memory, i.e., 128

KBytes, can be written page-by-page in as little as 5

seconds, when using interface features such as Toggle

Bit or Data# Polling to indicate the completion of a write

cycle. To protect against inadvertent write, the

SST29EE010A/29LE010A/29VE010A have on-chip

hardware and software data protection schemes. De-

signed, manufactured, and tested for a wide spectrum of

applications, the SST29EE010A/29LE010A/29VE010A

are offered with a guaranteed page write endurance of

cycles. Data retention is rated at greater than 100

years.

The SST29EE010A/29LE010A/29VE010A are suited

for applications that require convenient and economical

303-01 2/99

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