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SUM85N03-07P

Description
N-Channel 30-V (D-S) 175C MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size53KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SUM85N03-07P Overview

N-Channel 30-V (D-S) 175C MOSFET

SUM85N03-07P Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)85 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)93 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
SUM85N03-07P
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V
(BR)DSS
(V)
30
r
DS(on)
(W)
0.007 @ V
GS
= 10 V
0.010 @ V
GS
= 4.5 V
I
D
(A)
85
71
D
D
D
D
TrenchFETr Power MOSFET
175_C Junction Temperature
PWM Optimized for High Efficiency
New Package with Low Thermal Resistance
APPLICATIONS
D
Buck Converter
- High Side
- Low Side
D
Synchronous Rectifier
- Secondary Rectifier
D
TO-263
G
G
D S
S
N-Channel MOSFET
Top View
SUM85N03-07P
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche
Energy
a
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
c
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
30
"20
85
60
200
45
101
93
b
3.75
- 55 to 175
Unit
V
A
mJ
W
_C
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount
c
Junction-to-Ambient
J
ti t A bi t
Junction-to-Case
Notes
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 72036
S-03919—Rev. A, 19-May-03
www.vishay.com
Free Air
R
thJA
R
thJC
Symbol
Limit
40
62.5
1.6
Unit
_C/W
C/W
1
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