SUV85N03-04P
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
30
FEATURES
r
DS(on)
(W)
I
D
(A)
a
85
a
85
a
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
0.0043 @ V
GS
= 10 V
0.007 @ V
GS
= 4.5 V
APPLICATIONS
D
Secondary Side DC/DC
TO-262
D
1
2 3
G
G
D S
S
Top View
SUV85N03-04P
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
_
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
d
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
30
"20
85
a
85
a
240
75
280
166
c
3.75
-55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount
d
Junction-to-Ambient
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 72088
S-22245—Rev. A, 25-Nov-02
www.vishay.com
Free Air
R
thJA
R
thJC
Symbol
Limit
40
62.5
0.9
Unit
_C/W
C/W
1
SUV85N03-04P
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 24 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 24 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C
V
GS
= 4.5 V, I
D
= 20 A
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30
0.0055
120
0.0035
0.0043
0.0065
0.008
0.007
S
W
30
V
1
2
"100
1
50
250
A
m
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
b
Gate-Source Charge
b
Gate-Drain Charge
b
Gate Resistance
Turn-On Delay Time
b
Rise Time
b
Turn-Off Delay Time
b
Fall Time
b
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0.18
W
I
D
^
85 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 15 V, V
GS
= 10 V, I
D
= 85 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
4500
1380
615
71
15
16
2.2
15
12
50
22
23
18
75
35
ns
W
90
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM
Q
rr
I
F
= 85 A, di/dt = 100 A/ms
m
I
F
= 85 A, V
GS
= 0 V
1.1
42
1.4
0.03
85
240
1.5
70
2.1
0.06
A
V
ns
A
mC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 72088
S-22245—Rev. A, 25-Nov-02
SUV85N03-04P
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
V
GS
= 10 thru 6 V
5V
200
I
D
- Drain Current (A)
I
D
- Drain Current (A)
200
250
Vishay Siliconix
Transfer Characteristics
150
150
100
4V
100
T
C
= 125_C
50
25_C
50
2, 3 V
0
0
2
4
6
8
10
-55
_C
0
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Transconductance
180
T
C
= -55_C
r
DS(on)
- On-Resistance (
W
)
150
g
fs
- Transconductance (S)
25_C
120
125_C
90
0.006
0.008
On-Resistance vs. Drain Current
V
GS
= 4.5 V
0.004
V
GS
= 10 V
60
0.002
30
0
0
20
40
60
80
100
0.000
0
20
40
60
80
100
120
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Capacitance
7000
6000
C - Capacitance (pF)
5000
4000
3000
2000
1000
C
rss
0
0
6
12
18
24
30
0
0
20
40
C
oss
C
iss
20
Gate Charge
V
GS
- Gate-to-Source Voltage (V)
16
V
DS
= 15 V
I
D
= 85 A
12
8
4
60
80
100
120
140
V
DS
- Drain-to-Source Voltage (V)
Document Number: 72088
S-22245—Rev. A, 25-Nov-02
Q
g
- Total Gate Charge (nC)
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3
SUV85N03-04P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
- On-Resistance (
W)
(Normalized)
1.6
I
S
- Source Current (A)
100
Source-Drain Diode Forward Voltage
1.2
10
T
J
= 150_C
T
J
= 25_C
0.8
0.4
0.0
-50
-25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
T
J
- Junction Temperature (_C)
V
SD
- Source-to-Drain Voltage (V)
Avalanche Current vs. Time
1000
45
Drain Source Breakdown vs.
Junction Temperature
100
I
Dav
(a)
V
(BR)DSS
(V)
I
AV
(A) @ T
A
= 25_C
40
I
D
= 250
mA
10
I
AV
(A) @ T
A
= 150_C
35
1
30
0.1
0.00001
0.0001
0.001
0.01
0.1
1
25
-50
-25
0
25
50
75
100
125
150
175
t
in
(Sec)
T
J
- Junction Temperature (_C)
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Document Number: 72088
S-22245—Rev. A, 25-Nov-02
SUV85N03-04P
New Product
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
100
1000
Vishay Siliconix
Safe Operating Area
80
100
I
D
- Drain Current (A)
60
I
D
- Drain Current (A)
10
ms
100
ms
Limited
by r
DS(on)
1 ms
10 ms
100 ms
dc
10
40
20
1
T
C
= 25_C
Single Pulse
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
T
C
- Ambient Temperature (_C)
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
1
10
100
Square Wave Pulse Duration (sec)
Document Number: 72088
S-22245—Rev. A, 25-Nov-02
www.vishay.com
5
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