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TIP125

Description
5 A, 60 V, PNP, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size413KB,7 Pages
ManufacturerETC2
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TIP125 Overview

5 A, 60 V, PNP, Si, POWER TRANSISTOR

TIP125 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current5 A
Maximum Collector-Emitter Voltage60 V
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureDARLINGTON WITH BUILT-IN RESISTOR
Shell connectionCOLLECTOR
Number of components1
Transistor component materialsSILICON
Maximum ambient power consumption2 W
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor1000
TIP120, 121, 122, 125, 126, 127
Darlington Transistors
Features:
Designed for general-purpose amplifier and low speed switching applications.
Collector-Emitter sustaining voltage-V
CEO(sus)
= 60V (Minimum) - TIP120, TIP125
80V (Minimum) - TIP121, TIP126
100V (Minimum) - TIP122, TIP127.
Collector-Emitter saturation voltage-V
CE(sat)
= 2.0V (Maximum) at I
C
= 3.0A.
Monolithic construction with built-in-base-emitter shunt resistors.
Minimum
A
B
C
D
E
F
G
H
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case)
I
J
K
L
M
O
14.68
9.78
5.01
13.06
3.57
2.42
1.12
0.72
4.22
1.14
2.20
0.33
2.48
3.70
Maximum
15.31
10.42
6.52
14.62
4.07
3.66
1.36
0.96
4.98
1.38
2.97
0.55
2.98
3.90
NPN
TIP120
TIP121
TIP122
PNP
TIP 125
TIP 126
TIP 127
5.0 Ampere
Darlington
Complementary Silicon
Power Transistors
60 - 100 Volts
65 Watts
TO-220
Dimensions : Millimetres
Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -Continuous
-Peak
Base Current
Total Power Dissipation at T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
P
D
T
J
, T
STG
TIP120
TIP125
60
TIP121
TIP126
80
5.0
5.0
8.0
120
65
0.52
-65 to +150
A
mA
W
W/°C
°C
TIP122
TIP127
100
Unit
V
Thermal Characteristics
Characteristic
Thermal Resistance Junction to Case
Symbol
Rθjc
Maximum
1.92
Unit
°C/W
Page 1
30/05/05 V1.0

TIP125 Related Products

TIP125 TIP120 TIP121 TIP122 TIP126 TIP127
Description 5 A, 60 V, PNP, Si, POWER TRANSISTOR 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
Number of terminals 3 3 3 3 3 3
Transistor polarity PNP NPN NPN NPN NPN PNP
Maximum collector current 5 A 5 A 5 A 5 A 5 A 5 A
Maximum Collector-Emitter Voltage 60 V 60 V 80 V 100 V 80 V 100 V
state ACTIVE CONSULT MFR ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR Rectangle RECTANGULAR Rectangle RECTANGULAR Rectangle
Package Size FLANGE MOUNT Flange mounting FLANGE MOUNT Flange mounting FLANGE MOUNT Flange mounting
Terminal form THROUGH-HOLE THROUGH-hole THROUGH-HOLE THROUGH-hole THROUGH-HOLE THROUGH-hole
Terminal location SINGLE single SINGLE single SINGLE single
Packaging Materials PLASTIC/EPOXY Plastic/Epoxy PLASTIC/EPOXY Plastic/Epoxy PLASTIC/EPOXY Plastic/Epoxy
structure DARLINGTON WITH BUILT-IN RESISTOR darlington DARLINGTON Darlington WITH BUILT-IN diode AND resistor DARLINGTON WITH BUILT-IN DIODE AND RESISTOR Darlington WITH BUILT-IN diode AND resistor
Number of components 1 1 1 1 1 1
Transistor component materials SILICON silicon SILICON silicon SILICON silicon
Maximum ambient power consumption 2 W 2 W 65 W 2 W 2 W 2 W
Transistor type GENERAL PURPOSE POWER universal power supply GENERAL PURPOSE POWER universal power supply GENERAL PURPOSE POWER universal power supply
Minimum DC amplification factor 1000 1000 1000 1000 1000 1000
terminal coating TIN LEAD - TIN LEAD tin - MATTE Tin
Shell connection COLLECTOR COLLECTOR COLLECTOR - COLLECTOR -
Processing package description - Plastic, TO-220, 3 PIN TO-220, 3 PIN TO-220, 3 PIN ROHS COMPLIANT, PLASTIC PACKAGE-3 TO-220, 3 PIN
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