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TN0201KL

Description
420 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
Categorysemiconductor    Discrete semiconductor   
File Size98KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

TN0201KL Overview

420 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB

TN0201KL Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage20 V
Processing package descriptionLEAD FREE, TO-236, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption0.3500 W
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Maximum leakage current0.4200 A
Maximum drain on-resistance1 ohm
TN0201K/TN0201KL
New Product
Vishay Siliconix
N-Channel 20−V (D−S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS
Min (V)
20
FEATURES
I
D
(A)
V
GS(th)
(V)
1.0
1 0 to 3 0
3.0
D
TrenchFETr Power MOSFET
r
DS( )
DS(on)
Max (W)
1.0 @ V
GS
= 10 V
1.4 @ V
GS
= 4.5 V
TN0201K
0.42
0.35
TN0201KL
0.64
0.53
APPLICATIONS
D
Direct Logic-Level Interface: TTL/CMOS
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Solid-State Relays
TO-236
(SOT-23)
S
3
S
2
D
G
TO-226AA
(TO-92)
1
Device Marking
Front View
“S” TN
0201KL
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
G
1
2
Top View
TN0201K
Marking Code: K3ywl
K3 = Part Number Code for TN0201K
y
= Year Code
w
= Week Code
l
= Lot Traceability
Ordering Information: TN0201K-T1—E3 (Lead Free)
D
3
Top View
TN0201KL
Ordering Information: TN0201KL-TR1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limit
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
Pulsed Drain Current
a
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
www.vishay.com
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
TN0201K
20
"20
0.42
0.33
0.8
0.35
0.22
357
TN0201KL
Unit
V
0.64
0.51
1.5
0.8
0.51
156
−55
to 150
W
_C/W
_C
A
1

TN0201KL Related Products

TN0201KL TN0201KL-TR1
Description 420 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB 420 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
surface mount Yes NO
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