TN0201K/TN0201KL
New Product
Vishay Siliconix
N-Channel 20−V (D−S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS
Min (V)
20
FEATURES
I
D
(A)
V
GS(th)
(V)
1.0
1 0 to 3 0
3.0
D
TrenchFETr Power MOSFET
r
DS( )
DS(on)
Max (W)
1.0 @ V
GS
= 10 V
1.4 @ V
GS
= 4.5 V
TN0201K
0.42
0.35
TN0201KL
0.64
0.53
APPLICATIONS
D
Direct Logic-Level Interface: TTL/CMOS
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Solid-State Relays
TO-236
(SOT-23)
S
3
S
2
D
G
TO-226AA
(TO-92)
1
Device Marking
Front View
“S” TN
0201KL
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
G
1
2
Top View
TN0201K
Marking Code: K3ywl
K3 = Part Number Code for TN0201K
y
= Year Code
w
= Week Code
l
= Lot Traceability
Ordering Information: TN0201K-T1—E3 (Lead Free)
D
3
Top View
TN0201KL
Ordering Information: TN0201KL-TR1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limit
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
Pulsed Drain Current
a
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
www.vishay.com
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
TN0201K
20
"20
0.42
0.33
0.8
0.35
0.22
357
TN0201KL
Unit
V
0.64
0.51
1.5
0.8
0.51
156
−55
to 150
W
_C/W
_C
A
1
TN0201K/TN0201KL
Vishay Siliconix
New Product
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 10
mA
V
DS
= V
GS
, I
D
= 0.25 mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= 10 V V
GS
= 10 V
V,
TN0201K
TN0201KL
0.5
0.8
0.8
0.47
550
0.85
1.2
1.4
1.0
20
1.0
2.0
3.0
"100
1
10
V
nA
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
On-State
On State Drain Current
a
I
D( )
D(on)
A
Drain-Source On-Resistance
a
Forward Transconductance
a
Diode Forward Voltage
r
DS(on)
g
fs
V
SD
V
GS
= 4.5 V, I
D
= 0.1 A
V
GS
= 10 V, I
D
= 0.3 A
V
DS
= 10 V, I
D
= 0.3 A
I
S
= 0.3 A, V
GS
= 0 V
W
mS
V
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On
Turn On Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 50
W
I
D
^
0.3 A V
GEN
= 10 V
0 3 A,
R
G
= 6
W
V
DS
= 16 V, V
GS
= 10 V
I
D
^
0.3 A
1000
205
200
48
4.5
8
9
6.3
8
15
15
12
ns
W
1500
pC
Turn-Off Time
Notes
a. Pulse test: PW
v300
ms
duty cycle
v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
0.8
0.7
0.6
I
D
−
Drain Current (A)
0.5
0.4
0.3
0.2
3V
0.1
0.0
0.0
2V
0.4
0.8
1.2
1.6
2.0
0.0
0
1
2
3
4
5
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
I
D
−
Drain Current (A)
V
GS
= 10 thru 5 V
4V
0.8
1.0
Transfer Characteristics
0.6
0.4
T
J
= 125_C
0.2
25_C
−55_C
V
DS
−
Drain-to-Source Voltage (V)
www.vishay.com
2
TN0201K/TN0201KL
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
1.5
r
DS(on)
−
On-Resistance (
W
)
50
Vishay Siliconix
Capacitance
C
−
Capacitance (pF)
1.2
V
GS
= 4.5 V
0.9
40
C
iss
30
C
oss
20
C
rss
0.6
V
GS
= 10 V
0.3
10
0.0
0.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
4
8
12
16
20
I
D
−
Drain Current (A)
V
DS
−
Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 16 V
I
D
= 0.3 A
8
1.6
On-Resistance vs. Junction Temperature
r
DS(on)
−
On-Resistance (
W)
(Normalized)
1.4
V
GS
= 10 V
I
D
= 0.3 A
6
1.2
V
GS
= 4.5 V
I
D
= 0.1 A
4
1.0
2
0.8
0
0.0
0.2
0.4
0.6
0.8
1.0
0.6
−50
−25
0
25
50
75
100
125
150
Q
g
−
Total Gate Charge (nC)
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
3
1
I
S
−
Source Current (A)
T
J
= 150_C
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
−
On-Resistance (
W
)
0.1
I
D
= 0.3 A
0.01
T
J
= 25_C
0.001
0.0
4
8
12
16
20
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
www.vishay.com
3
TN0201K/TN0201KL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
0.2
V
GS(th)
Variance (V)
I
D
= 250
mA
−0.0
−0.2
−0.4
−0.6
−50
−25
0
25
50
75
100
125
150
T
J
−
Temperature (_C)
Safe Operating Area (TO-236, TN0201K Only)
10
I
DM
Limited
r
DS(on)
Limited
1
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
1 ms
10 ms
0.1
I
D(on)
Limited
T
A
= 25_C
Single Pulse
100 ms
1s
10 s
dc
Safe Operating Area (TO-226AA, TN0201KL Only)
10
r
DS(on)
Limited
1
1 ms
10 ms
100 ms
10 s
1s
dc
I
DM
Limited
0.1
I
D(on)
Limited
0.01
0.01
T
A
= 25_C
Single Pulse
0.001
0.1
1
BV
DSS
Limited
10
100
0.001
0.1
1
BV
DSS
Limited
10
100
V
DS
−
Drain-to-Source Voltage (V)
V
DS
−
Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, TN0201K Only)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
10
100
600
www.vishay.com
4
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
TN0201K/TN0201KL
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-226AA, TN0201KL Only)
2
1
Vishay Siliconix
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 72671
S-40245—Rev. A, 16-Feb-04
www.vishay.com
5
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