TO-247 datasheet, PDF - EEWORLD Datasheet

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TO-247: Description36 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD; Categorysemiconductor Discrete semiconductor; File Size353KB，5 Pages; ManufacturerIXYS ( Littelfuse ); Websitehttp://www.ixys.com/

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TO-247 Overview

36 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD

TO-247 Parametric

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	500 V
Processing package description	TO-247AD, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	TIN SILVER COPPER
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER
Maximum leakage current	36 A
Rated avalanche energy	1500 mJ
Maximum drain on-resistance	0.1700 ohm
Maximum leakage current pulse	108 A

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PolarHV

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTH 36N50P

IXTQ 36N50P

IXTT 36N50P

IXTV 36N50P

IXTV 36N50PS

DSS

D25

DS(on)

= 500 V

= 36 A

≤

170 mΩ

Ω

TO-3P (IXTQ)

Symbol

DSS

DGR

GSM

D25

dv/dt

stg

SOLD

Weight

Test Conditions

= 25° C to 150° C

= 25° C to 150° C; R

= 1 MΩ

Continuous

Transient

= 25° C

= 25° C, pulse width limited by T

= 25° C

≤

, di/dt

≤

100 A/µs, V

≤

DSS

≤

150° C, R

= 3

Ω

= 25° C

Maximum Ratings

500

±30

±40

108

1.5

540

-55 ... +150

150

-55 ... +150

V/ns

°C

D (TAB)

(TAB)

TO-247 (IXTH)

TO-268 (IXTT)

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

Mounting torque(TO-247)

Mounting force (PLUS220)

TO-247

TO-268

PLUS220

TO-3P

300

260

PLUS220 (IXTV)

1.13/10 Nm/lb.in.

20..120/4.5..15

5.5

N/lb

D (TAB)

PLUS220 SMD(IXTV..S)

Symbol

Test Conditions

= 25° C unless otherwise specified)

DSS

GS(th)

GSS

DSS

DS(on)

= 0 V, I

= 250

µA

= V

, I

= 250

µA

±30

, V

= 0

= V

DSS

= 0 V

= 125° C

Characteristic Values

Min. Typ.

Max.

500

3.0

5.0

±100

250

µA

G = Gate

S = Source

D (TAB)

D = Drain

TAB = Drain

= 10 V, I

= 0.5 I

D25

Pulse test, t

≤

300

µs,

duty cycle d

≤

2 %

170 mΩ

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

DS99228E(01/06)

TO-247 Related Products

	TO-247	PLUS220	PLUS220SMD	TO-268	TO-3P
Description	36 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD	36 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD	36 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD	36 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD	36 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Number of terminals	3	3	3	3	3
Minimum breakdown voltage	500 V	500 V	500 V	500 V	500 V
Processing package description	TO-247AD, 3 PIN	TO-247AD, 3 PIN	TO-247AD, 3 PIN	TO-247AD, 3 PIN	TO-247AD, 3 PIN
Lead-free	Yes	Yes	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
terminal coating	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Number of components	1	1	1	1	1
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Maximum leakage current	36 A	36 A	36 A	36 A	36 A
Rated avalanche energy	1500 mJ	1500 mJ	1500 mJ	1500 mJ	1500 mJ
Maximum drain on-resistance	0.1700 ohm	0.1700 ohm	0.1700 ohm	0.1700 ohm	0.1700 ohm
Maximum leakage current pulse	108 A	108 A	108 A	108 A	108 A

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