PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH 36N50P
IXTQ 36N50P
IXTT 36N50P
IXTV 36N50P
IXTV 36N50PS
V
DSS
I
D25
R
DS(on)
= 500 V
= 36 A
≤
170 mΩ
Ω
TO-3P (IXTQ)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150° C, R
G
= 3
Ω
T
C
= 25° C
Maximum Ratings
500
500
±30
±40
36
108
36
50
1.5
10
540
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°C
G
S
D (TAB)
(TAB)
G
D
S
(TAB)
TO-247 (IXTH)
TO-268 (IXTT)
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque(TO-247)
Mounting force (PLUS220)
TO-247
TO-268
PLUS220
TO-3P
300
260
PLUS220 (IXTV)
1.13/10 Nm/lb.in.
20..120/4.5..15
6
5
2
5.5
N/lb
g
g
g
g
G
D
S
D (TAB)
PLUS220 SMD(IXTV..S)
Symbol
Test Conditions
(T
J
= 25° C unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250
µA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
500
3.0
5.0
±100
25
250
V
V
nA
µA
µA
G
G = Gate
S = Source
S
D (TAB)
D = Drain
TAB = Drain
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
170 mΩ
Features
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
DS99228E(01/06)
© 2006 IXYS All rights reserved
IXTH 36N50P IXTQ 36N50P IXTT 36N50P
IXTV36N50P IXTV 36N50PS
Symbol
Test Conditions
Characteristic Values
(T
J
= 25° C unless otherwise specified)
Min.
Typ.
Max.
23
36
5500
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
510
40
25
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
R
G
= 3
Ω
(External)
27
75
21
85
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
30
31
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.23
°
C/W
(TO-247 and TO-3P)
(PLUS220)
0.21
0.21
°
C/W
°
C/W
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Test Conditions
V
GS
= 0 V
Repetitive
Characteristic Values
(T
J
= 25° C unless otherwise specified)
Min.
Typ.
Max.
36
108
1.5
400
A
A
V
ns
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= 25 A, -di/dt = 100 A/µs
V
R
= 100 V, V
GS
= 0 V
Characteristic Curves
Fig. 1. Output Char acte r is tics
@ 25
º
C
36
32
28
V
GS
= 10V
8V
7V
80
70
60
V
GS
= 10V
8V
7V
Fig. 2. Exte nde d Output Char acte r is tics
@ 25
º
C
I
D
- Amperes
24
I
D
- Amperes
20
16
12
8
4
0
0
1
2
3
4
6V
50
40
30
20
10
0
6.5V
6V
5.5V
5V
5.5V
5V
0
2
4
6
8
5
6
7
V
D S
- V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
V
D S
- V olts
10
12
14
16
18
20
22
24
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXTH 36N50P IXTQ 36N50P IXTT 36N50P
IXT V36N50P IXTV 36N50PS
Fig. 3. Output Char acte r is tics
@ 125
º
C
36
32
28
V
GS
= 10V
7V
6V
3.1
2.8
V
GS
= 10V
Fig. 4. R
DS(on
)
Nor m alize d to I
D
= 18A
V alue vs . Junction Te m pe r atur e
I
D
- Amperes
24
20
16
12
8
4
0
0
2
4
6
4.5V
5V
5.5V
R
D S ( o n )
- Normalized
2.5
2.2
1.9
1.6
1.3
1
0.7
0.4
I
D
= 18A
I
D
= 36A
V
D S
- V olts
8
10
12
14
16
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
Fig. 6. Dr ain Cur r e nt vs . Cas e
Te m pe r atur e
40
35
Fig. 5. R
DS(on)
Nor m alize d to
3.4
3
I
D
= 18A V alue vs . Dr ain Cur r e nt
V
GS
= 10V
T
J
= 125ºC
R
D S ( o n )
- Normalized
2.6
2.2
1.8
1.4
1
0.6
0
10
20
30
I
D
- Amperes
T
J
= 25ºC
25
20
15
10
5
0
I
D
- A mperes
30
40
50
60
70
80
-50
-25
T
C
- Degrees Centigrade
0
25
50
75
100
125
150
Fig. 7. Input Adm ittance
55
50
45
40
60
50
70
Fig. 8. Tr ans conductance
T
J
= -40ºC
25ºC
125ºC
I
D
- Amperes
35
30
25
20
15
10
5
0
4
4.5
5
5.5
6
6.5
7
T
J
= 125ºC
25ºC
-40ºC
- Siemens
40
30
20
10
0
0
10
20
30
40
50
60
70
80
90
V
G S
- V olts
g
fs
I
D
- A mperes
© 2006 IXYS All rights reserved
IXTH 36N50P IXTQ 36N50P IXTT 36N50P
IXTV36N50P IXTV 36N50PS
Fig. 9. Source Cur r e nt vs .
Sour ce -To-Dr ain V oltage
100
90
80
70
10
9
8
7
V
DS
= 250V
I
D
= 18A
I
G
= 10m A
Fig. 10. Gate Char ge
I
S
- Amperes
V
G S
- Volts
T
J
= 25ºC
60
50
40
30
20
10
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
T
J
= 125ºC
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
80
90
100
V
S D
- V olts
Fig. 11. Capacitance
10000
1000
Q
G
- nanoCoulombs
Fig. 12. For w ar d-Bias
Safe Ope r ating Are a
T
J
= 150ºC
C is s
Capacitance - picoFarads
T
C
= 25ºC
R
DS(on)
Lim it
I
D
- Amperes
1000
100
25µs
100µs
10
DC
1m s
10m s
C oss
100
f = 1MH z
10
0
5
10
15
C rs s
1
20
25
30
35
40
10
100
1000
V
D S
- V olts
V
D S
- V olts
Fig. 13. Maximum Transient Thermal Resistance
1.00
R
( t h ) J C
-
º
C / W
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 36N50P IXTQ 36N50P IXTT 36N50P
IXTV 36N50P IXTV 36N50PS
TO-247 AD (IXTH) Outline
TO-3P (IXTQ) Outline
TO-268 (IXTT) Outline
1
2
3
Terminals:
1 - Gate
2 - Drain
3 - Source
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
∅P
Q
R
S
Millimeter
Min.
Max.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
3.55
5.89
4.32
6.15
5.3
2.54
2.6
1.4
2.13
3.12
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
BSC
Inches
Min.
Max.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205
.780
.140
0.232
.170
242
.209
.102
.098
.055
.084
.123
.031
.845
.640
0.225
.800
.177
.144
0.252
.216
BSC
PLUS220 (IXTV) Outline
PLUS220SMD (IXTV_S) Outline
© 2006 IXYS All rights reserved
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