SML9030–T254
MECHANICAL DATA
Dimensions in mm (inches)
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
Dia.
3.78 (0.149)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
P–CHANNEL
MOS
TRANSISTOR
V
DSS
I
D(cont)
R
DS(on)
FEATURES
• P CHANNEL
• REPETITIVE AVALANCHE RATED
• DYNAMIC dv/dt RATING
30.35 (1.195)
31.40 (1.235)
16.89 (0.665)
17.40 (0.685)
13.59 (0.535)
13.84 (0.545)
–50V
–18A
0.14
W
1
2
3
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
20.07 (0.790)
20.32 (0.800)
3.81 (0.150)
BSC
• FAST SWITCHING
• EASE OF PARALLELING
• SIMPLE DRIVE REQUIREMENTS
TO–254 – Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
R
q
JC
R
q
JA
Notes
1) Repetitive Rating: Pulse width limited by maximum junction temperature.
2) @ V
DD
= -25V , L = 1.3mH , R
G
= 25
W
, I
AS
= -18A , Starting T
J
= 25°C.
3) @ I
SD
£
-18A , di/dt
£
170A/
m
s , V
DD
£
BV
DSS
, T
J
£
175°C.
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
1
Repetitive Avalanche Energy
1
Peak Diode Recovery
3
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
(V
GS
= -10V , T
case
= 25°C)
(V
GS
= -10V , T
case
= 100°C)
±20V
-18A
-13A
-72A
88W
0.59W/°C
370mJ
-18A
8.8mJ
-4.5V/ns
–55 to +175°C
–55 to +200°C
0.6°C/W
48°C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 1/95
SML9030–T254
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C unless otherwise stated)
Parameter
BV
DSS
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Test Conditions
V
GS
= 0
I
D
= -1mA
V
GS
= -10V
V
DS
= V
GS
V
DS
= -25V
V
DS
= -60V
V
DS
= -48V
V
GS
= -20V
V
GS
= 20V
V
GS
= 0
V
DS
= -25V
f = 1MHz
I
D
= -18A
V
DS
= -48V
V
GS
= -10V
V
DD
= -30V
I
D
= -18A
R
G
= 12
W
R
D
= 1.5
W
I
D
= -11A
I
D
= -250
m
A
I
D
= -11A
V
GS
= 0
V
GS
= 0
T
J
= 125°C
I
D
= -250
m
A
Min.
-50
Typ.
Max.
Unit
V
D
BV
DSS
Temperature Coefficient of
D
T
J
Breakdown Voltage
R
DS(on)
Static Drain – Source On Resistance
1
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
L
D
L
S
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1
Gate – Source Charge
1
Gate – Drain (“Miller”) Charge
1
Turn–On Delay Time
1
Rise Time
1
Turn–Off Delay Time
1
Fall Time
1
Reference to 25°C
-0.060
0.14
-2
5.9
-100
-500
-100
100
1100
620
100
34
9.9
16
18
120
20
58
-18
-72
-4
V / °C
W
V
S
m
A
nA
pF
nC
nC
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current (Body Diode)
Pulse Source Current
2
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
1
Reverse Recovery Charge
1
I
S
= -18A
V
GS
= 0
I
F
= -18A
d
i
/ d
t
=
100A/
m
s
T
J
= 25°C
100
0.28
4.5
7.5
T
J
= 25°C
A
V
ns
-6.3
200
0.52
m
C
PACKAGE CHARACTERISTICS
Internal Drain Inductance
(from 6mm down lead to centre of drain bond pad)
Internal Source Inductance
(from 6mm down lead to centre of source bond pad)
nH
Notes
1) Pulse Test: Pulse Width
£
300ms,
d £
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 1/95
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