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TSHG6410_09

Description
5 mm, 1 ELEMENT, INFRARED LED, 850 nm
CategoryLED optoelectronic/LED   
File Size124KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

TSHG6410_09 Overview

5 mm, 1 ELEMENT, INFRARED LED, 850 nm

TSHG6410_09 Parametric

Parameter NameAttribute value
Number of functions1
Minimum operating temperature-40 Cel
Maximum operating temperature85 Cel
Processing package descriptionGREEN, PLASTIC PACKAGE-2
EU RoHS regulationsYes
China RoHS regulationsYes
stateActive
Optoelectronic device typeINFRARED LED
structureSINGLE
forward_current_max0.1000 A
jesd_609_codee2
Rated output power55 mW
eak_wavelength__nm_850
shapeROUND
size5 mm
terminal coatingTIN SILVER
dditional_featureHIGH RELIABILITY
TSHG6410
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm,
GaAlAs Double Hetero
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength:
p
= 850 nm
94 8389
High reliability
High radiant power
High radiant intensity
Angle of half intensity:
= ± 18°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: f
c
= 18 MHz
• Good spectral matching with CMOS cameras
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
DESCRIPTION
TSHG6410 is an infrared, 850 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras
• High speed IR data transmission
PRODUCT SUMMARY
COMPONENT
TSHG6410
I
e
(mW/sr)
90
(deg)
± 18
p
(nm)
850
tr (ns)
20
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSHG6410
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t
5 s, 2 mm from case
J-STD-051, leads 7 mm,
soldered on PCB
t
p
/T = 0.5, t
p
= 100 μs
t
p
= 100 μs
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
1
180
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Rev. 1.3, 23-Aug-11
Document Number: 81870
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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