7M4042S65CB datasheet, PDF - EEWORLD Datasheet

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7M4042S65CB: DescriptionStandard SRAM, 256KX4, 65ns, CMOS, CDIP28, 1.600 X 0.400 INCH, 0.280 INCH HEIGHT, CERAMIC, SIDEBRAZED, DIP-28; Categorystorage storage; File Size303KB，6 Pages; ManufacturerIDT (Integrated Device Technology)

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7M4042S65CB Overview

Standard SRAM, 256KX4, 65ns, CMOS, CDIP28, 1.600 X 0.400 INCH, 0.280 INCH HEIGHT, CERAMIC, SIDEBRAZED, DIP-28

7M4042S65CB Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1164070765
package instruction	DIP, DIP28,.4
Reach Compliance Code	not_compliant
ECCN code	3A001.A.2.C
Maximum access time	65 ns
I/O type	COMMON
JESD-30 code	R-CDIP-T28
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of functions	1
Number of terminals	28
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	256KX4
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.4
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883 Class B
Maximum standby current	0.122 A
Minimum standby current	4.5 V
Maximum slew rate	0.32 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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7M4042S65CB Related Products

	7M4042S65CB	7M4042S80CB
Description	Standard SRAM, 256KX4, 65ns, CMOS, CDIP28, 1.600 X 0.400 INCH, 0.280 INCH HEIGHT, CERAMIC, SIDEBRAZED, DIP-28	Standard SRAM, 256KX4, 80ns, CMOS, CDIP28, 1.600 X 0.400 INCH, 0.280 INCH HEIGHT, CERAMIC, SIDEBRAZED, DIP-28
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Objectid	1164070765	1164070767
package instruction	DIP, DIP28,.4	DIP, DIP28,.4
Reach Compliance Code	not_compliant	not_compliant
ECCN code	3A001.A.2.C	3A001.A.2.C
Maximum access time	65 ns	80 ns
I/O type	COMMON	COMMON
JESD-30 code	R-CDIP-T28	R-CDIP-T28
JESD-609 code	e0	e0
memory density	1048576 bit	1048576 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM
memory width	4	4
Number of functions	1	1
Number of terminals	28	28
word count	262144 words	262144 words
character code	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C
organize	256KX4	256KX4
Output characteristics	3-STATE	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP	DIP
Encapsulate equivalent code	DIP28,.4	DIP28,.4
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	225	225
power supply	5 V	5 V
Certification status	Not Qualified	Not Qualified
Filter level	MIL-STD-883 Class B	MIL-STD-883 Class B
Maximum standby current	0.122 A	0.122 A
Minimum standby current	4.5 V	4.5 V
Maximum slew rate	0.32 mA	0.32 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V
surface mount	NO	NO
technology	CMOS	CMOS
Temperature level	MILITARY	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	30	30

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