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7M4042S80CB

Description
Standard SRAM, 256KX4, 80ns, CMOS, CDIP28, 1.600 X 0.400 INCH, 0.280 INCH HEIGHT, CERAMIC, SIDEBRAZED, DIP-28
Categorystorage    storage   
File Size303KB,6 Pages
ManufacturerIDT (Integrated Device Technology)
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7M4042S80CB Overview

Standard SRAM, 256KX4, 80ns, CMOS, CDIP28, 1.600 X 0.400 INCH, 0.280 INCH HEIGHT, CERAMIC, SIDEBRAZED, DIP-28

7M4042S80CB Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1164070767
package instructionDIP, DIP28,.4
Reach Compliance Codenot_compliant
ECCN code3A001.A.2.C
Maximum access time80 ns
I/O typeCOMMON
JESD-30 codeR-CDIP-T28
JESD-609 codee0
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width4
Number of functions1
Number of terminals28
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize256KX4
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.4
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply5 V
Certification statusNot Qualified
Filter levelMIL-STD-883 Class B
Maximum standby current0.122 A
Minimum standby current4.5 V
Maximum slew rate0.32 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30

7M4042S80CB Related Products

7M4042S80CB 7M4042S65CB
Description Standard SRAM, 256KX4, 80ns, CMOS, CDIP28, 1.600 X 0.400 INCH, 0.280 INCH HEIGHT, CERAMIC, SIDEBRAZED, DIP-28 Standard SRAM, 256KX4, 65ns, CMOS, CDIP28, 1.600 X 0.400 INCH, 0.280 INCH HEIGHT, CERAMIC, SIDEBRAZED, DIP-28
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Objectid 1164070767 1164070765
package instruction DIP, DIP28,.4 DIP, DIP28,.4
Reach Compliance Code not_compliant not_compliant
ECCN code 3A001.A.2.C 3A001.A.2.C
Maximum access time 80 ns 65 ns
I/O type COMMON COMMON
JESD-30 code R-CDIP-T28 R-CDIP-T28
JESD-609 code e0 e0
memory density 1048576 bit 1048576 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
memory width 4 4
Number of functions 1 1
Number of terminals 28 28
word count 262144 words 262144 words
character code 256000 256000
Operating mode ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C
organize 256KX4 256KX4
Output characteristics 3-STATE 3-STATE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
encapsulated code DIP DIP
Encapsulate equivalent code DIP28,.4 DIP28,.4
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 225 225
power supply 5 V 5 V
Certification status Not Qualified Not Qualified
Filter level MIL-STD-883 Class B MIL-STD-883 Class B
Maximum standby current 0.122 A 0.122 A
Minimum standby current 4.5 V 4.5 V
Maximum slew rate 0.32 mA 0.32 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V
surface mount NO NO
technology CMOS CMOS
Temperature level MILITARY MILITARY
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 30
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