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TSM9NB50

Description
500V N-Channel Power MOSFET
File Size169KB,8 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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TSM9NB50 Overview

500V N-Channel Power MOSFET

TSM9NB50
500V N-Channel Power MOSFET
TO-220
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
500
0.85 @ V
GS
=10V
I
D
(A)
9
General Description
The TSM9NB50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half
bridge.
Features
Low R
DS(ON)
0.85Ω (Max.)
Low gate charge typical @ 44nC (Typ.)
Improve dv/dt capability
Block Diagram
Ordering Information
Part No.
TSM9NB50CZ C0
TSM9NB50CI C0
Package
TO-220
ITO-220
Packing
50pcs / Tube
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *
Single Pulse Avalanche Energy (Note 2)
Operating Junction Temperature
Storage Temperature Range
* Limited by maximum junction temperature
Tc = 25ºC
Tc = 100ºC
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
T
J
T
STG
Limit
500
±30
9.0
5.4
36
208
150
-55 to +150
Unit
V
V
A
A
A
mJ
ºC
o
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
TO-220
ITO-220
Symbol
JC
JA
Limit
0.9
3.1
62.5
Unit
o
C/W
Thermal Resistance - Junction to Ambient
TO-220 / ITO-220
Notes: Surface mounted on FR4 board t
10sec
1/7
Version: A12
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