INCHANGE Semiconductor
isc Thyristors
DESCRIPTION
·With
TO-3PN packaging
·Can
be operated in 4 quadrants
·Advanced
technology to provide customers with high
commutation performances
·Minimum
Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Switching
applications
·Phase
control
·Static
switching on inductive or resistive load
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BTA41-600B
MAX
UNIT
V
DRM
V
RRM
I
T(RSM)
I
TSM
P
G(AV)
T
j
T
stg
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Surge non-repetitive on-state current
Tc=75℃
50HZ
60HZ
600
600
40
315
300
1
-40~125
-40~150
V
V
A
A
W
℃
℃
Average gate power dissipation ( over any 20 ms period )
Operating junction temperature
Storage temperature
ELECTRICAL CHARACTERISTICS (T
C
=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
I
RRM
I
DRM
V
TM
I
GT
V
GT
Rth
(j-c)
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate-trigger current
Gate-trigger voltage
Junction to case
V
R
=V
RRM
Rated;
V
D
=V
DRM
Rated;
Tj=25℃
Tj=125℃
0.01
6
1.8
Ⅰ
Ⅱ
Ⅲ
Ⅳ
50
50
50
100
1.5
1.2
mA
V
mA
V
℃/W
I
T
=60A；t
P
=380μs
V
D
=12V;R
L
=33Ω;
V
D
=12V;R
L
=33Ω;
isc website
：
www.iscsemi.com
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