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VI20150CHM3-4W: DescriptionDual High-Voltage Trench MOS Barrier Schottky Rectifier; File Size128KB，5 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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VI20150CHM3-4W Overview

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V20150C, VI20150C

Vishay General Semiconductor

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V

= 0.59 V at I

= 5 A

FEATURES

TMBS

TO-220AB

TO-262AA

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

V20150C

PIN 1

PIN 3

VI20150C

PIN 1

PIN 3

•

Halogen-free according to IEC 61249-2-21 definition

PIN 2

CASE

PIN 2

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

PRIMARY CHARACTERISTICS

F(AV)

RRM

FSM

at I

= 10 A

max.

2 x 10 A

150 V

120 A

0.69 V

150 °C

MECHANICAL DATA

Case:

TO-220AB and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS compliant, and

commercial grade

Base P/NHM3 - halogen-free, RoHS compliant, and

AEC-Q101 qualified

Terminals:

Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

Polarity:

As marked

Mounting Torque:

10 in-lbs maximum

MAXIMUM RATINGS

= 25 °C unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

per device

Maximum average forward rectified current (fig. 1)

per diode

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

Voltage rate of change (rated V

)

Operating junction and storage temperature range

F(AV)

FSM

dV/dt

, T

STG

SYMBOL

RRM

V20150C

150

120

10 000

- 55 to + 150

V/μs

°C

VI20150C

UNIT

Document Number: 89151

Revision:23-Mar-11

For technical questions within your region, please contact one of the following:

www.vishay.com

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical

requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements

about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular

product with the properties described in the product specification is suitable for use in a particular application. Parameters

provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All

operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree

to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and

damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay

or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to

obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by

any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 11-Mar-11

www.vishay.com

VI20150CHM3-4W Related Products

	VI20150CHM3-4W	V20150C	V20150C-M3-4W	V20150CHM3-4W	V20150C_11	VI20150C-M3-4W
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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