SMBTA63, SMBTA64
PNP Silicon Darlington Transistors
High collector current
High DC current gain
3
2
1
VPS05161
Type
SMBTA63
SMBTA64
Maximum Ratings
Parameter
Marking
s2U
s2V
1=B
1=B
Pin Configuration
2=E
2=E
3=C
3=C
Package
SOT23
SOT23
Symbol
V
CES
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Value
30
30
10
500
800
100
200
330
150
-65 ... 150
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 81 °C
Junction temperature
Storage temperature
mA
A
mA
mW
°C
Thermal Resistance
Junction - soldering point
1)
R
thJS
210
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Nov-30-2001
SMBTA63, SMBTA64
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 µA,
V
BE
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
Emitter cutoff current
V
EB
= 10 V,
I
C
= 0
DC current gain 1)
I
C
= 10 mA,
V
CE
= 5 V
I
C
= 100 mA,
V
CE
= 5 V
Collector-emitter saturation voltage1)
I
C
= 100 mA,
I
B
= 0.1 mA
Base-emitter saturation voltage 1)
I
C
= 100 mA,
I
B
= 0.1 mA
AC Characteristics
SMBTA63
SMBTA64
SMBTA63
SMBTA64
V
CEsat
V
BEsat
h
FE
5000
10000
10000
20000
-
-
-
-
-
-
-
-
-
-
-
-
1.5
2
I
EBO
-
-
100
I
CBO
-
-
10
I
CBO
-
-
100
V
(BR)EBO
10
-
-
V
(BR)CBO
30
-
-
V
(BR)CES
30
-
-
typ.
max.
Unit
V
nA
µA
nA
-
V
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 20 MHz
f
T
125
-
-
MHz
1) Pulse test: t
≤
300
µ
s, D = 2%
2
Nov-30-2001
京公网安备 11010802033920号
EEWORLD
