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Datasheet> All Categories > semiconductor> Discrete semiconductor> NE21935
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NE21935

Description
C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size555KB，12 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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NE21935 Overview

C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

NE21935 Parametric

Parameter NameAttribute value
Maximum collector current0.0800 A
Maximum Collector-Emitter Voltage10 V
Number of terminals4
Processing package description0.100 INCH, DB-4
stateActive
Maximum Collector Base Capacitance1 pF
structureSINGLE
Minimum DC amplification factor30
highest frequency bandC BAND
jesd_30_codeO-CRDB-F4
Number of components1
Maximum operating temperature200 Cel
Packaging MaterialsCERAMIC, METAL-SEALED COFIRED
packaging shapeROUND
Package SizeDISK BUTTON
larity_channel_typeNPN
wer_dissipation_max__abs_0.5800 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountYES
terminal coatingNOT SPECIFIED
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Rated crossover frequency8000 MHz

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NE21935 Related Products

NE21935 NE219 NE21903 NE21908 NE21912 NE21937 NE21987 2SC2218 2SC22174 2SC2367
Description C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
Maximum collector current 0.0800 A 0.0800 A 0.0800 A 0.0800 A 0.0800 A 0.0800 A 0.0800 A 0.0800 A 0.0800 A 0.0800 A
Maximum Collector-Emitter Voltage 10 V 10 V 10 V 10 V 10 V 10 V 10 V 10 V 10 V 10 V
Number of terminals 4 4 4 4 4 4 4 4 4 4
Processing package description 0.100 INCH, DB-4 0.100 INCH, DB-4 0.100 INCH, DB-4 0.100 INCH, DB-4 0.100 INCH, DB-4 0.100 INCH, DB-4 0.100 INCH, DB-4 0.100 INCH, DB-4 0.100 INCH, DB-4 0.100 INCH, DB-4
state Active Active Active Active Active Active Active Active Active Active
Maximum Collector Base Capacitance 1 pF 1 pF 1 pF 1 pF 1 pF 1 pF 1 pF 1 pF 1 pF 1 pF
structure SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC amplification factor 30 30 30 30 30 30 30 30 30 30
highest frequency band C BAND C BAND C BAND C BAND C BAND C BAND C BAND C BAND C BAND C BAND
jesd_30_code O-CRDB-F4 O-CRDB-F4 O-CRDB-F4 O-CRDB-F4 O-CRDB-F4 O-CRDB-F4 O-CRDB-F4 O-CRDB-F4 O-CRDB-F4 O-CRDB-F4
Number of components 1 1 1 1 1 1 1 1 1 1
Maximum operating temperature 200 Cel 200 Cel 200 Cel 200 Cel 200 Cel 200 Cel 200 Cel 200 Cel 200 Cel 200 Cel
Packaging Materials CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
packaging shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package Size DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
larity_channel_type NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN
wer_dissipation_max__abs_ 0.5800 W 0.5800 W 0.5800 W 0.5800 W 0.5800 W 0.5800 W 0.5800 W 0.5800 W 0.5800 W 0.5800 W
qualification_status COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
sub_category Other Transistors Other Transistors Other Transistors Other Transistors Other Transistors Other Transistors Other Transistors Other Transistors Other Transistors Other Transistors
surface mount YES YES YES YES YES YES YES YES YES YES
terminal coating NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL RADIAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Rated crossover frequency 8000 MHz 8000 MHz 8000 MHz 8000 MHz 8000 MHz 8000 MHz 8000 MHz 8000 MHz 8000 MHz 8000 MHz

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