NE219 datasheet, PDF - EEWORLD Datasheet

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NE219: DescriptionC BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size555KB，12 Pages; ManufacturerNEC ( Renesas ); Websitehttps://www2.renesas.cn/zh-cn/

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NE219 Overview

C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

NE219 Parametric

Parameter Name	Attribute value
Maximum collector current	0.0800 A
Maximum Collector-Emitter Voltage	10 V
Number of terminals	4
Processing package description	0.100 INCH, DB-4
state	Active
Maximum Collector Base Capacitance	1 pF
structure	SINGLE
Minimum DC amplification factor	30
highest frequency band	C BAND
jesd_30_code	O-CRDB-F4
Number of components	1
Maximum operating temperature	200 Cel
Packaging Materials	CERAMIC, METAL-SEALED COFIRED
packaging shape	ROUND
Package Size	DISK BUTTON
larity_channel_type	NPN
wer_dissipation_max__abs_	0.5800 W
qualification_status	COMMERCIAL
sub_category	Other Transistors
surface mount	YES
terminal coating	NOT SPECIFIED
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Rated crossover frequency	8000 MHz

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NE219 Related Products

	NE219	NE21903	NE21908	NE21912	NE21935	NE21937	NE21987	2SC2218	2SC22174	2SC2367
Description	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
Maximum collector current	0.0800 A	0.0800 A	0.0800 A	0.0800 A	0.0800 A	0.0800 A	0.0800 A	0.0800 A	0.0800 A	0.0800 A
Maximum Collector-Emitter Voltage	10 V	10 V	10 V	10 V	10 V	10 V	10 V	10 V	10 V	10 V
Number of terminals	4	4	4	4	4	4	4	4	4	4
Processing package description	0.100 INCH, DB-4	0.100 INCH, DB-4	0.100 INCH, DB-4	0.100 INCH, DB-4	0.100 INCH, DB-4	0.100 INCH, DB-4	0.100 INCH, DB-4	0.100 INCH, DB-4	0.100 INCH, DB-4	0.100 INCH, DB-4
state	Active	Active	Active	Active	Active	Active	Active	Active	Active	Active
Maximum Collector Base Capacitance	1 pF	1 pF	1 pF	1 pF	1 pF	1 pF	1 pF	1 pF	1 pF	1 pF
structure	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC amplification factor	30	30	30	30	30	30	30	30	30	30
highest frequency band	C BAND	C BAND	C BAND	C BAND	C BAND	C BAND	C BAND	C BAND	C BAND	C BAND
jesd_30_code	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4
Number of components	1	1	1	1	1	1	1	1	1	1
Maximum operating temperature	200 Cel	200 Cel	200 Cel	200 Cel	200 Cel	200 Cel	200 Cel	200 Cel	200 Cel	200 Cel
Packaging Materials	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
packaging shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package Size	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
larity_channel_type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
wer_dissipation_max__abs_	0.5800 W	0.5800 W	0.5800 W	0.5800 W	0.5800 W	0.5800 W	0.5800 W	0.5800 W	0.5800 W	0.5800 W
qualification_status	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
sub_category	Other Transistors	Other Transistors	Other Transistors	Other Transistors	Other Transistors	Other Transistors	Other Transistors	Other Transistors	Other Transistors	Other Transistors
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
terminal coating	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL	RADIAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Rated crossover frequency	8000 MHz	8000 MHz	8000 MHz	8000 MHz	8000 MHz	8000 MHz	8000 MHz	8000 MHz	8000 MHz	8000 MHz

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