NPN Silicon Transistors
SMBT 6428
SMBT 6429
q
For AF input stages and driver applications
q
High current gain
q
Low collector-emitter saturation voltage
Type
SMBT 6428
SMBT 6429
Marking
s1K
s1L
Ordering Code
(tape and reel)
Q68000-A8321
Q68000-A8322
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation,
T
S
=
71 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
≤
310
≤
240
Symbol
V
CE0
V
CB0
V
EB0
I
C
P
tot
T
j
T
stg
Values
SMBT 6428
SMBT 6429
50
60
45
55
6
200
330
150
– 65 … + 150
Unit
V
mA
mW
˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
SMBT 6428
SMBT 6429
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA
SMBT 6428
SMBT 6429
Collector-base breakdown voltage
I
C
= 10
µ
A
SMBT 6428
SMBT 6429
Emitter-base breakdown voltage
I
E
= 1
µ
A
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0,
T
A
= 150 ˚C
Collector cutoff current
V
CE
= 30 V,
I
B
= 0
Emitter-base cutoff current
V
EB
= 5 V,
I
C
= 0
DC current gain
I
C
= 10
µ
A,
V
CE
= 5 V
I
C
= 100
µ
A,
V
CE
= 5 V
I
C
=
1 mA,
V
CE
= 5 V
SMBT 6428
SMBT 6429
SMBT 6428
SMBT 6429
SMBT 6428
SMBT 6429
SMBT 6428
SMBT 6429
V
CEsat
–
–
V
BE(on)
0.56
–
–
–
0.2
0.6
0.66
V
(BR)CE0
50
45
V
(BR)CB0
60
55
V
(BR)EB0
I
CB0
–
–
I
CE0
I
EB0
h
FE
250
500
250
500
250
500
250
500
–
–
–
–
–
–
–
–
–
–
650
1250
–
–
–
–
V
–
–
–
–
–
–
10
10
100
10
–
nA
µ
A
nA
6
–
–
–
–
–
–
–
–
–
–
V
Values
typ.
max.
Unit
I
C
= 10 mA,
V
CE
= 5 V
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
Base-emitter voltage
I
C
= 1 mA,
V
CE
= 5 V
1)
Pulse test conditions:
t
≤
300
µ
s,
D
≤
2 %.
Semiconductor Group
2
SMBT 6428
SMBT 6429
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
AC characteristics
Transition frequency
I
C
= 5 mA,
V
CE
= 5 V,
f
= 100 MHz
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
f
T
C
obo
C
ibo
100
–
–
–
–
–
700
3
15
MHz
pF
Values
typ.
max.
Unit
Semiconductor Group
3
SMBT 6428
SMBT 6429
Total power dissipation
P
tot
=
f
(T
A
*;
T
S
)
* Package mounted on epoxy
Collector-base capacitance
C
CB0
=
f
(V
CB0
)
Emitter-base capacitance
C
EB0
=
f
(V
EB0
)
Permissible pulse load
P
tot max
/P
tot DC
=
f
(t
p
)
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 5 V
Semiconductor Group
4
SMBT 6428
SMBT 6429
Base-emitter saturation voltage
I
C
=
f
(V
BEsat
),
h
FE
= 40
Collector-emitter saturation voltage
I
C
=
f
(V
CEsat
),
h
FE
= 40
Collector current
I
C
=
f
(V
BE
)
V
CE
= 1 V
DC current gain
h
FE
=
f
(I
C
)
V
CE
= 1 V
Semiconductor Group
5
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