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SMBJ65A

Description
600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size79KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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SMBJ65A Overview

600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

SMBJ65A Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Maximum breakdown voltage111 V
Minimum breakdown voltage100 V
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipAVALANCHE
structureSINGLE
Diode component materialsSILICON
Maximum power consumption limit1.5 W
polarityBIDIRECTIONAL
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
shutdown voltage90 V
Maximum non-repetitive peak speed power600 W
SMBJ5.0(C)A - SMBJ170(C)A
600W SURFACE MOUNT TRANSIENT VOLTAGE
SUPPRESSOR
Features
·
·
·
·
·
·
·
600W Peak Pulse Power Dissipation
5.0V - 170V Standoff Voltages
Glass Passivated Die Construction
Uni- and Bi-Directional Versions Available
Excellent Clamping Capability
Fast Response Time
Plastic Material - UL Flammability
Classification Rating 94V-0
Case: SMB, Transfer Molded Epoxy
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity Indicator: Cathode Band
(Note: Bi-directional devices have no polarity
indicator.)
Marking: Date Code and Marking Code
See Page 3
Weight: 0.1 grams (approx.)
Ordering Info: See Page 3
@ T
A
= 25°C unless otherwise specified
Symbol
P
PK
I
FSM
V
F
T
j
, T
STG
Value
600
100
3.5
5.0
-55 to +150
Unit
W
A
V
V
°C
B
Dim
A
SMB
Min
3.30
4.06
1.91
0.15
5.00
0.10
0.76
2.00
Max
3.94
4.70
2.21
0.31
5.59
0.20
1.52
2.62
A
C
B
C
D
Mechanical Data
·
·
·
·
·
·
D
J
E
G
H
J
H
G
E
All Dimensions in mm
Maximum Ratings
Characteristic
Peak Pulse Power Dissipation
(Non repetitive current pulse derated above T = 25°C)
A
(Note 1)
Peak Forward Surge Current, 8.3ms Single Half Sine
Wave Superimposed on Rated Load (JEDEC Method)
(Notes 1, 2, & 3)
Instantaneous Forward Voltage @ I
PP
= 35A V
BR
<100V
(Notes 1, 2, & 3)
V
³100V
BR
Operating and Storage Temperature Range
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Measured with 8.3ms single half sine-wave. Duty cycle = 4 pulses per minute maximum.
3. Unidirectional units only.
DS19002 Rev. 11 - 2
1 of 3
SMBJ5.0(C)A - SMBJ170(C)A

SMBJ65A Related Products

SMBJ65A SMBJ80CA SMBJ80A SMBJ65CA SMBJ50CA
Description 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA Transient Voltage Suppressor Transient Voltage Suppressor 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Number of terminals 2 - - 2 2
Number of components 1 - - 1 1
Maximum breakdown voltage 111 V - - 111 V 111 V
Minimum breakdown voltage 100 V - - 100 V 100 V
Processing package description HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN - - HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
EU RoHS regulations Yes - - Yes Yes
state ACTIVE - - ACTIVE ACTIVE
packaging shape RECTANGULAR - - RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE - - SMALL OUTLINE SMALL OUTLINE
surface mount Yes - - Yes Yes
Terminal form C BEND - - C BEND C BEND
terminal coating MATTE TIN - - MATTE TIN MATTE TIN
Terminal location DUAL - - DUAL DUAL
Packaging Materials PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY
Craftsmanship AVALANCHE - - AVALANCHE AVALANCHE
structure SINGLE - - SINGLE SINGLE
Diode component materials SILICON - - SILICON SILICON
Maximum power consumption limit 1.5 W - - 1.5 W 1.5 W
polarity BIDIRECTIONAL - - BIDIRECTIONAL BIDIRECTIONAL
Diode type TRANS VOLTAGE SUPPRESSOR DIODE - - TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
shutdown voltage 90 V - - 90 V 90 V
Maximum non-repetitive peak speed power 600 W - - 600 W 600 W
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