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M2698ZT350

Description
DIODE 2698 A, 3500 V, SILICON, RECTIFIER DIODE, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size412KB,12 Pages
ManufacturerIXYS
Download Datasheet Parametric Compare View All

M2698ZT350 Overview

DIODE 2698 A, 3500 V, SILICON, RECTIFIER DIODE, Rectifier Diode

M2698ZT350 Parametric

Parameter NameAttribute value
Objectid1638813959
package instructionO-XEDB-N2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationFAST RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-XEDB-N2
Maximum non-repetitive peak forward current30600 A
Number of components1
Phase1
Number of terminals2
Maximum output current2698 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage3500 V
Maximum reverse recovery time6.2 µs
surface mountYES
Terminal formNO LEAD
Terminal locationEND
WESTCODE
An
Date:- 12 Jul, 2004
Data Sheet Issue:- 1
IXYS
Company
Fast Recovery Diode
Type M2698Z#250 to M2698Z#350
Old Type No.: SM25-36CXC964
Absolute Maximum Ratings
VOLTAGE RATINGS
V
RRM
V
RSM
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
2500-3500
2600-3600
UNITS
V
V
OTHER RATINGS
I
F(AV)M
I
F(AV)M
I
F(AV)M
I
F(RMS)
I
F(d.c.)
I
FSM
I
FSM2
It
It
T
j op
T
stg
2
2
MAXIMUM
LIMITS
2698
1825
1165
4979
4545
27.8
30.6
3.86×10
4.68×10
6
6
UNITS
A
A
A
A
A
kA
kA
As
As
°C
°C
2
2
Maximum average forward current, T
sink
=55°C, (note 2)
Maximum average forward current. T
sink
=100°C, (note 2)
Maximum average forward. T
sink
=100°C, (note 3)
Nominal RMS forward current, T
sink
=25°C, (note 2)
D.C. forward current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
RM
=60% V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
RM
≤10V,
(note 5)
I t capacity for fusing t
p
=10ms, V
RM
=60% V
RRM
, (note 5)
I t capacity for fusing t
p
=10ms, V
RM
≤10V,
(note 5)
2
2
Operating temperature range
Storage temperature range
-40 to +150
-40 to +150
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 150°C T
j
initial.
Data Sheet. Types M2698Z#250 to M2698Z#350 Issue 1
Page 1 of 11
July, 2004

M2698ZT350 Related Products

M2698ZT350 M2698ZC280 M2698ZC300 M2698ZD320 M2698ZT260 M2698ZV260 M2698ZV300 M2698ZV340
Description DIODE 2698 A, 3500 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 2698 A, 2800 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 2698 A, 3000 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 2698 A, 3200 V, SILICON, RECTIFIER DIODE, Rectifier Diode Rectifier Diode, 1 Phase, 1 Element, 2698A, 2600V V(RRM), Silicon, DIODE 2698 A, 2600 V, SILICON, RECTIFIER DIODE, Rectifier Diode Rectifier Diode, 1 Phase, 1 Element, 2698A, 3000V V(RRM), Silicon, DIODE 2698 A, 3400 V, SILICON, RECTIFIER DIODE, Rectifier Diode
Objectid 1638813959 1638813941 1638813942 1638813950 1638813954 1638813961 1638813963 1638813965
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-XEDB-N2 O-XEDB-N2 O-XEDB-N2 O-XEDB-N2 O-XEDB-N2 O-XEDB-N2 O-XEDB-N2 O-XEDB-N2
Maximum non-repetitive peak forward current 30600 A 30600 A 30600 A 30600 A 30600 A 30600 A 30600 A 30600 A
Number of components 1 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2
Maximum output current 2698 A 2698 A 2698 A 2698 A 2698 A 2698 A 2698 A 2698 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 3500 V 2800 V 3000 V 3200 V 2600 V 2600 V 3000 V 3400 V
Maximum reverse recovery time 6.2 µs 6.2 µs 6.2 µs 6.2 µs 6.2 µs 6.2 µs 6.2 µs 6.2 µs
surface mount YES YES YES YES YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location END END END END END END END END
package instruction O-XEDB-N2 O-XEDB-N2 O-XEDB-N2 O-XEDB-N2 - O-XEDB-N2 - O-XEDB-N2
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