PD25GB80 datasheet, PDF - EEWORLD Datasheet

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PD25GB80: DescriptionTHYRISTOR MODULE; File Size109KB，2 Pages; ManufacturerETC

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THYRISTOR MODULE

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THYRISTOR MODULE

PK

(PD,PE,KK)

25GB

UL;E76102 M）

（

Power Thyristor/Diode Module

PK25GB

series are designed for various rectifier circuits

and power controls. For your circuit application. following internal connections and wide

voltage ratings up to 800V are available. and electrically isolated mounting base make

your mechanical design easy.

26MAX

3

93.5MAX

80

2

+

–

1

K2

G2

2- 6.5

100 A/μs

●

dv/dt 500V/μs

（Applications）

Various rectifiers

AC/DC motor drives

Heater controls

Light dimmers

Static switches

●

di/dt

Internal Configurations

K2

G2

3

2

16.5

23

A1K2

（K2）

K1

（A2） G1

1

K2

G2

3

2

K1

G1

●

I

T(AV)

25A, I

T(RMS)

39A, I

TSM

500A

13

~

3-M5

A1K2

（K2）

K1

（A2）

1

110TAB

30MAX

K2

3

2

K2

G2

K1

（A2） G1

1

A1K2

（K2）

K1

（A2） G1

1

（A1）

21

PK

PE

PD

KK

Unit：

A

■Maximum

Ratings

Symbol

V

RRM

V

RSM

V

DRM

Symbol

Item

＊Repetitive

Peak Reverse Voltage

＊Non-Repetitive

Peak Reverse Voltage

Repetitive Peak Off-State Voltage

Item

PK25GB40 PD25GB40

KK25GB40 PE25GB40

400

480

400

Conditions

Single phase, half wave, 180°

conduction, Tc：97℃

Single phase, half wave, 180°

conduction, Tc：97℃

1

cycle,

／

2

PK25GB80 PD25GB80

KK25GB80 PE25GB80

800

960

800

Ratings

25

39

450/500

1000

10

1

3

10

5

Unit

V

Unit

A

2

S

W

A

V

A/

μs

V

℃

N½m

（㎏f½B）

g

（

I

T AV）

＊Average

On-State Current

（

I

T RMS）

＊R.M.S.

On-State Current

I

TSM

I

2

t

P

GM

（AV）

P

G

＊Surge

On-State Current

＊I

2

t

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Current

Peak Gate Voltage (Forward)

Peak Gate Voltage (Rsverse)

Critical Rate of Rise of On-State Current

＊Isolation

Breakdown Voltage (R.M.S.)

＊Operating

Junction Temperature

＊Storage

Temperature

Mounting

Torque

Mass

Mounting

（M5）

Terminal（M5）

50Hz/60Hz, peak Value, non-repetitive

Value for one cycle of surge current

I

FGM

V

FGM

V

RGM

di／dt

V

ISO

Tj

Tstg

I

G

＝100mA，

Tj＝25℃，

D

＝

1 2

V

DRM

，

G

/dt＝0.1A/

V

／

dI

μs

A.C.1minute

100

2500

−40 to ＋125

Recommended Value 2.5-3.9（25-40）

Recommended Value 1.5-2.5（15-25）

4.7（48）

2.7（28）

170

■Electrical

Characteristics

Symbol

I

DRM

I

RRM

V

TM

I

GT

／V

GT

V

GD

tgt

dv／dt

I

H

I

L

Item

Repetitive Peak Off-State Current, max.

＊Repetitive

Peak Reverse Current, max.

＊Peak

On-State Voltage, max.

Gate Trigger Current/Voltage, max.

Non-Trigger Gate, Voltage. min.

Turn On Time, max.

Critical Rate of Rise of Off-State Voltage, min.

Holding Current, typ.

Lutching Current, typ.

Conditions

at V

DRM

, single phase, half wave, Tj＝125℃

at V

DRM

, single phase, half wave, Tj＝125℃

On-State Current 75A, Tj＝125℃ Inst. measurement

Tj＝25℃，I

T

＝1A，V

D

＝6V

Tj＝125℃，V

D

＝

1 2

V

DRM

／

I

T

＝25A，

G

＝100mA，

I

Tj＝25℃，

D

＝

1 2

V

DRM

，

G

/dt＝0.1A/

V

／

dI

μs

Tj＝125℃, V

D

＝

2 3

V

DRM

, Exponential wave.

／

Tj＝25℃

Junction to case

Ratings

4

1.50

50/3

0.25

10

500

50

100

0.80

Unit

mA

V

mA/V

V

μs

V/

μs

mA

℃/W

Rth j-c）＊Thermal Impedance, max.

（

＊mark：Thyristor

and Diode part. No mark：Thyristor part

SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com

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