THYRISTOR MODULE
PK
(PD,PE,KK)
25GB
UL;E76102 M）
（
Power Thyristor/Diode Module
PK25GB
series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 800V are available. and electrically isolated mounting base make
your mechanical design easy.
26MAX
3
93.5MAX
80
2
+
–
1
K2
G2
2- 6.5
100 A/μs
●
dv/dt 500V/μs
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
●
di/dt
Internal Configurations
K2
G2
3
2
16.5
23
23
A1K2
（K2）
K1
（A2） G1
1
K2
G2
3
2
K1
G1
●
I
T(AV)
25A, I
T(RMS)
39A, I
TSM
500A
13
~
3-M5
A1K2
（K2）
K1
（A2）
1
110TAB
30MAX
K2
3
2
2
K2
G2
K1
（A2） G1
1
A1K2
（K2）
K1
（A2） G1
1
1
（A1）
21
PK
PE
PD
KK
Unit：
A
■Maximum
Ratings
Ratings
Symbol
V
RRM
V
RSM
V
DRM
Symbol
Item
＊Repetitive
Peak Reverse Voltage
＊Non-Repetitive
Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Item
PK25GB40 PD25GB40
KK25GB40 PE25GB40
400
480
400
Conditions
Single phase, half wave, 180°
conduction, Tc：97℃
Single phase, half wave, 180°
conduction, Tc：97℃
1
cycle,
／
2
PK25GB80 PD25GB80
KK25GB80 PE25GB80
800
960
800
Ratings
25
39
450/500
1000
10
1
3
10
5
Unit
V
V
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A/
μs
V
℃
℃
N½m
（㎏f½B）
g
（
I
T AV）
＊Average
On-State Current
（
I
T RMS）
＊R.M.S.
On-State Current
I
TSM
I
2
t
P
GM
（AV）
P
G
＊Surge
On-State Current
＊I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Rsverse)
Critical Rate of Rise of On-State Current
＊Isolation
Breakdown Voltage (R.M.S.)
＊Operating
Junction Temperature
＊Storage
Temperature
Mounting
Torque
Mass
Mounting
（M5）
Terminal（M5）
50Hz/60Hz, peak Value, non-repetitive
Value for one cycle of surge current
I
FGM
V
FGM
V
RGM
di／dt
V
ISO
Tj
Tstg
I
G
＝100mA，
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/dt＝0.1A/
V
／
dI
μs
A.C.1minute
100
2500
−40 to ＋125
−40 to ＋125
Recommended Value 2.5-3.9（25-40）
Recommended Value 1.5-2.5（15-25）
4.7（48）
2.7（28）
170
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
／V
GT
V
GD
tgt
dv／dt
I
H
I
L
Item
Repetitive Peak Off-State Current, max.
＊Repetitive
Peak Reverse Current, max.
＊Peak
On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
Lutching Current, typ.
Conditions
at V
DRM
, single phase, half wave, Tj＝125℃
at V
DRM
, single phase, half wave, Tj＝125℃
On-State Current 75A, Tj＝125℃ Inst. measurement
Tj＝25℃，I
T
＝1A，V
D
＝6V
Tj＝125℃，V
D
＝
1 2
V
DRM
／
I
T
＝25A，
G
＝100mA，
I
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/dt＝0.1A/
V
／
dI
μs
Tj＝125℃, V
D
＝
2 3
V
DRM
, Exponential wave.
／
Tj＝25℃
Tj＝25℃
Junction to case
Ratings
4
4
1.50
50/3
0.25
10
500
50
100
0.80
Unit
mA
mA
V
mA/V
V
μs
V/
μs
mA
mA
℃/W
Rth j-c）＊Thermal Impedance, max.
（
＊mark：Thyristor
and Diode part. No mark：Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
Transient Thermal Impedance
θ
（℃/W）
j-c
Surge On-State Current
（A）
;;
PK(PD,PE,KK)25GB
２
Gate Characteristics
５
２
On-State Voltage max
Peak Forward Gate Voltage
（10V）
On-State Current
（A）
１
１
０
Gate Voltage
（V）
５
２
Ga
te
Peak Gate Current
（3A）
Av
er
ag
e
Pe
Po ak G
we a
（ te
r
10
W
）
１
２
０
Tj＝125℃
Po
we
（
r
５
２
１
０
０
1W
）
５
２
125℃
25℃ −30℃
１
１
０
Maximum Gate Voltage that will not trigger any unit
（0.25V）
５
１
−１ １
０
１
０
２
５
１
２
０
２
５
１
３
０
２
５
０５
．
１０
．
１５
．
２０
．
２５
．
３０
．
Gate Current
（mA）
On-State Voltage
（V）
Allowable Case Temperature
（℃）
６
０
Average On-State Current Vs Power Dissipation
（Single phase half wave）
Per one element
１０
４
１０
２
１０
０
８
０
６
０
４
０
２
０
Average On-State Current Vs Maximum Allowable
Case Temperature
（Single phase half wave）
Per one element
2
Power Dissipation
（W）
５
０
360
。
４
０
D.C.
: Conduction Angle
３
０
θ
＝120゜
θ
＝90゜
θ
＝60゜
θ
＝30゜
θ
＝180゜
２
０
１
０
2
360
。
: Conduction Angle
θ
＝60゜ θ
＝120゜
θ
＝30゜ θ
＝90゜ θ
＝180゜
D.C.
０
１
０
２
０
３
０
４
０
５
０
０
１
０
２
０
３
０
４
０
５
０
Average On-State Current
（A）
Average On-State Current
（A）
６０
０
５０
０
４０
０
Surge On-State Current Rating
（Non-Repetitive）
Per One Element
Ｔ = ５ start
½２ ℃
Transient Thermal Impedance
１
０
２
０
５ １
１
０
Junction to case
０９
．
０６
．
Per one element
３０
０
２０
０
１０
０
60Hz
50Hz
０３
．
０
１
２
５
１
０
２
０
５
０
１０
０
０
１
-３
２
０
５ １
-２
２
０
Time
（cycles）
Time
t
sec）
（
５ １
-１
２
０
５ １
０
０
Allowable Case Temperature
（℃）
Total Power Dissipation
（W）
２０
０
W3
B6
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.1℃/W
W1
Total Power Dissipation
（W）
Id Ar.m.s.）
（
２０
０
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.1℃/W
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.1
℃/W
Rth:0.4℃/W
１０
０
１０
５
１０
０
B2
１０
５
１０
０
１０
１
５
０
Id Aav.）
（
１０
１
Id Aav.）
（
９
０
１０
０
１０
１
１０
０
５
０
１０
２
Id Ar.m.s.）
（
１０
２
０
２
５
５
０
７
５
１０
２
１５
２
０ ２ ５ ７ １０ １５
５ ０ ５ ０ ２
０
１５
２
０ ２ ５ ７ １０ １５
５ ０ ５ ０ ２
１５
２
０ ２ ５ ７ １０ １５
５ ０ ５ ０ ２
Output Current
（A）
Ambient Temperature
（℃）
Ambient Temperature
（℃） Ambient Temperature
（℃）
Allowable Case Temperature
（℃）
２０
５
Output Current
W１ Bidirectional connection
；
２０
５
B２
；Two Pluse bridge connection
B６ Six pulse bridge connection
；
Ｗ３ Three phase
；
bidiretional connection
Energy Infrastructure?
京公网安备 11010802033920号
EEWORLD
