SIMOPAC
®
Module
BSM 181
BSM 181 R
V
DS
= 100 V
I
D
= 200 A
R
DS(on)
= 8.5 mΩ
q
q
q
q
q
q
Power module
Single switch
N channel
Enhancement mode
Package with insulated metal base plate
1)
Package outline/Circuit diagram: 1
Type
BSM 181
BSM 181 R
Maximum Ratings
Parameter
Drain-source voltage
Ordering Code
C67076-A1001-A2
C67076-A1016-A2
Symbol
Values
800
800
±
20
36
144
– 55 … + 150
700
≤
0.18
2500
16
11
F
55/150/56
Unit
V
V
DS
V
DGR
V
GS
I
D
I
D puls
T
j
,
T
stg
P
tot
R
th JC
V
is
–
–
–
–
Drain-gate voltage,
R
GS
= 20 kΩ
Gate-source voltage
Continuous drain current,
T
C
= 25 ˚C
Pulsed drain current,
T
C
= 25 ˚C
Operating and storage temperature range
Power dissipation,
T
C
= 25 ˚C
Thermal resistance
Chip-case
Insulation test voltage
2)
,
t
= 1 min.
Creepage distance, drain-source
Clearance, drain-source
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
1)
2)
A
˚C
W
K/W
V
ac
mm
–
See chapter Package Outline and Circuit Diagrams.
Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with
DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group
57
03.96
BSM 181
BSM 181 R
Electrical Characteristics
at
T
j
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Static Characteristics
Drain-source breakdown voltage
V
GS
= 0,
I
D
= 0.25 mA
Gate threshold voltage
V
DS
=
V
GS
,
I
D
= 1 mA
Zero gate voltage drain current
V
DS
= 800 V,
V
GS
= 0
T
j
= 25 ˚C
T
j
= 125 ˚C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0
Drain-source on-state resistance
V
GS
= 10 V,
I
D
= 23 A
Dynamic Characteristics
Forward transconductance
V
DS
≥
2
×
I
D
×
R
DS(on)max.
,
I
D
= 23 A
Input capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
Turn-on time
t
on
(t
on
=
t
d (on)
+
t
r
)
V
CC
= 400 V,
V
GS
= 10 V
I
D
= 23 A,
R
GS
= 3.3
Ω
Turn-off time
t
off
(t
off
=
t
d (off)
+
t
f
)
V
CC
= 400 V,
V
GS
= 10 V
I
D
= 23 A,
R
GS
= 3.3
Ω
Values
typ.
max.
Unit
V
(BR)DSS
800
–
3.0
–
4.0
V
V
GS(th)
2.1
I
DSS
–
–
50
300
10
0.18
250
1000
µA
I
GSS
–
100
nA
Ω
–
0.24
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
15
–
–
–
–
–
–
–
25
24
1.3
0.5
60
30
370
70
–
32
2.0
0.8
–
–
–
–
S
nF
ns
Semiconductor Group
58
BSM 181
BSM 181 R
Electrical Characteristics
(cont’d)
at
T
j
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Reverse diode
Continuous reverse drain current
T
C
= 25 ˚C
Pulsed reverse drain current
T
C
= 25 ˚C
Diode forward on-voltage
I
F
= 72 A ,
V
GS
= 0
Reverse recovery time
I
F
=
I
S
, d
i
F
/d
t
= 100 A/
µs,
V
R
= 100 V
T
j
= 25 ˚C
T
j
= 150 ˚C
Reverse recovery charge
I
F
=
I
S
, d
i
F
/d
t
= 100 A/
µs,
V
R
= 100 V
T
j
= 25 ˚C
T
j
= 150 ˚C
Values
typ.
max.
Unit
I
S
–
–
–
1.1
36
144
A
I
SM
–
V
SD
–
1.4
V
ns
–
–
1200
–
–
–
µC
–
–
42
50
–
–
t
rr
Q
rr
Semiconductor Group
59
BSM 181
BSM 181 R
Characteristics at
T
j
= 25 ˚C,
unless otherwise specified.
Power dissipation
P
tot
=
f
(
T
C
)
parameter:
T
j
= 150 ˚C
Typ. output characteristics
I
D
=
f
(
V
DS
)
parameter:
t
p
= 80
µs
pulse test
Safe operating area
I
D
=
f
(
V
DS
)
parameter: single pulse,
T
C
= 25 ˚C,
T
j
≤
150 ˚C
Typ. transfer characteristic
I
D
=
f
(
V
GS
)
parameter:
t
p
= 80
µs
,
V
DS
= 25 V
Semiconductor Group
60
BSM 181
BSM 181 R
Continuous drain current
I
D
=
f
(
T
C
)
parameter:
V
GS
≥
10 V,
T
j
= 150 ˚C
Drain-source breakdown voltage
V
(BR)DSS
(T
j
)
=
b
×
V
(BR)DSS
(25 ˚C)
Drain source on-state resistance
R
DS(on)
=
f
(
T
j
)
parameter:
I
D
= 36 A;
V
GS
= 10 V, (spread)
Typical capacitances
C
=
f
(
V
DS
)
parameter:
V
GS
= 0,
f
= 1 MHz
Semiconductor Group
61
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