Mini PROFET® BSP 350
•
High-side switch
•
Short-circuit protection
•
Overtemperature protection with hysteresis
•
Overload protection
•
Overvoltage protection
•
Reverse battery protection
1
)
•
Switching inductive load
•
Clamp of negative output voltage with inductive loads
•
Maximum current internally limited
Package: SOT 223
Type
Ordering code
Q67000-S227
Pins:
1
IN
2
V
bb
3
OUT
MiniPROFET
4
3
2
1
4
V
bb
BSP 350
Maximum Ratings
Parameter
Supply voltage
Load current
self-limited
Maximum current through input pin (DC)
see internal circuit diagram
Symbol Values
V
bb
50
I
L
I
L(SC)
I
IN
±15
Unit
V
A
mA
mJ
°C
W
K/W
Inductive load switch-off energy dissipation
Operating temperature range
Storage temperature range
Max. power dissipation (DC)
2)
T
A
= 25 °C
Thermal resistance
chip - soldering point:
chip - ambient:
2
)
E
AS
T
j
T
stg
P
tot
R
thJS
R
thJA
+ V bb
2/4
5
-40 ...+150
-55 ...+150
1.7
17
72
Control
Circuit
OUT
3
R IN
IN
1
RL
Temperature
Sensor
GND
1
)
2)
For 12 V applications only. Reverse load current only limited by connected load.
BSP 350 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection
Semiconductor Group
1
04.97
BSP 350
Electrical Characteristics
Parameter and Conditions
at
T
j
= 25 °C,
Vbb
= 13.5V unless otherwise specified
Symbol
min
Values
typ
Unit
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 2 to 3)
I
L
= 0.07 A, pin 1 = GND
T
j
= 25°C
T
j
= 150°C
V
bb
= 6 V,
T
j
= 25°C
Nominal load current (pin 2 to 3)
ISO Standard:
V
ON
= V
bb
-
V
OUT
= 0.5 V
T
S
= 85 °C
Turn-on time
to 90%
V
OUT
Turn-off time
to 10%
V
OUT
R
L
= 270
Ω
Slew rate on
10 to 30%
V
OUT
,
R
L
= 270
Ω
Slew rate off
70 to 40%
V
OUT
,
R
L
= 270
Ω
R
ON
--
--
--
0.07
4
8
5
--
5
10
10
--
Ω
I
L(ISO)
A
t
on
t
off
dV /dt
on
-dV/dt
off
--
--
--
--
60
70
4
2
100
140
6
6
µs
V/µs
Input
T
j
= - 40...+150°C
OFF state input current
R
L
= 270
Ω,
V
OUT
≤
0,1V
ON state input current, (pin 1 grounded)
3
)
T
j
= - 40...+150°C
I
IN(off)
I
IN(on)
--
--
--
0.3
0.05
1
mA
mA
Operating Parameters
Operating voltage (pin 1 grounded)
4
)
T
j
= - 40...+150°C
Leakage current (pin 2 to 3, pin 1 open)
T
j
= 25°C
T
j
=150°C
V
bb(on)
I
bb(off)
4.9
--
--
--
1
1.2
45
10
10
V
µ
A
3
)
4
)
Driver circuit must be capable to drive currents
>1mA.
Below Vbb=4.5 V typ. without chargepump, Vout
≈
Vbb - 2 V
Semiconductor Group
2
BSP 350
Parameter and Conditions
at
T
j
= 25 °C,
Vbb
= 13.5V unless otherwise specified
Symbol
min
Values
typ
Unit
max
Protection Functions
Current limit (pin 2 to 3)
5)
T
j
= 25°C
T
j
= -40...+150°
I
L(SC)
T
jt
∆T
jt
V
bbin(AZ)
V
ON(CL)
E
AS
R
IN
Thermal overload trip temperature
Thermal hysteresis
Overvoltage protection
T
j
=-40...+150°C
Output clamp (ind. load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
Inductive load switch-off energy dissipation
6)
Reverse battery resistor (pin 1 to 2)
0.2
0.1
150
--
50
--
--
--
0.5
--
--
20
56
56
--
1
1
1.2
--
--
--
--
5
--
A
°C
K
V
V
mJ
kΩ
Reverse Diode
Continious reverse drain current
Pulsed reverse drain current
Diode forward on voltage
I
F
= 0.2 A, I
IN
=
≤
0.05 mA
T
j
= 25°C
T
j
= 25°C
I
S
I
SM
V
SD
--
--
--
--
--
0.9
0.2
0.8
1.2
A
A
V
5)
load current limits onset at IL * Ron approx. 1V
short circuit protection: combination of current limit and thermal overload switch off
while demagnetizing load inductance, dissipated energy is
EAS=
∫
(VON(CL) * iL(t) dt,
V
ON(CL)
2
approx.
EAS=
1
/
2
* L * I
L
* (
)
V
ON(CL)
-V
bb
6)
Semiconductor Group
3
BSP 350
Max allowable power dissipation
Ptot = f (TA,TSP)
Ptot [W]
8
7
6
5
T
4
3
2
T
A
1
0
0
25
50
75
100
125
150
TA, TSP[°C]
1
0
0
5
10
15
20
25
Vbb [V]
SP
4
3
2
Typ. on state resistance (Vbb- pin to OUT pin)
RON = f (Vbb);
IL = 70 mA; Tj = 25°C
RON [Ω]
8
7
6
5
On state resistance (Vbb- pin to OUT pin)
RON = f (Tj);V
bb = 13.5 V;IL = 70 mA
RON [Ω]
10
9
Typ. short circuit current
IL(SC) = f(Tj);
Vbb = 13.5V
ILSC [Α]
0.7
0.6
8
7
6
5
typ
4
3
2
0.1
1
0
-50
-25
0
25
50
75
100 125 150
TJ [°C]
0
-50
-25
0
25
50
75
100 125 150
TJ [°C]
0.3
98%
0.5
0.4
0.2
Semiconductor Group
4
BSP 350
Test circuit
Typ. short circuit current
IL(SC) = f(VON);
Vbb = 13.5V; Tj = 25°C
ILSC [Α]
0.7
V
bb
2/4
V
on
0.6
I
in
1
3
0.5
V
out
V
in
0.4
0.3
0.2
Turn on conditions
0.1
0
0
2
4
6
8
Typ. short circuit current
IL(SC) = f(t);
Vbb = 13.5V
no heatsink; Parameter: TjStart
IL(SC)[mA]
1000
VON [V]
800
600
400
Chargepump threshold
VON = f (Vbb)
125°C
25°C
-40°C
200
4
2
0
-0,5
0,5
1,5
2,5
3,5
4,5
5,5
typ.
m ax.
t[s]
2
4
6
8
Semiconductor Group
5
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