BSP52 datasheet, PDF - EEWORLD Datasheet

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BSP52: Description1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size153KB，5 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BSP52 Overview

1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BSP52 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	80 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	2000
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	1.5 W
Maximum power dissipation(Abs)	1.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Maximum off time (toff)	1500 ns
Maximum opening time (tons)	400 ns
VCEsat-Max	1.8 V
Base Number Matches	1

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NPN Silicon Darlington Transistors

BSP 50

… BSP 52

High collector current

Low collector-emitter saturation voltage

Complementary types: BSP 60 … BSP 62 (PNP)

Type

BSP 50

BSP 51

BSP 52

Marking

BSP 50

BSP 51

BSP 52

Ordering Code

(tape and reel)

Q62702-P1163

Q62702-P1164

Q62702-P1165

Pin Configuration

Package

SOT-223

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Peak collector current

Base current

Total power dissipation,

= 124 ˚C

Junction temperature

Storage temperature range

Thermal Resistance

Junction - ambient

Junction - soldering point

th JA

th JS

≤

Symbol

CER

CB0

EB0

tot

stg

Values

Unit

BSP 50 BSP 51 BSP 52

0.1

1.5

150

– 65 … + 150

˚C

100

K/W

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm

40 mm

1.5 mm/6 cm

Cu.

Semiconductor Group

5.91

BSP52 Related Products

	BSP52	BSP50	BSP50BSP52	BSP51	Q62702-P1165	Q62702-P1164	Q62702-P1163
Description	1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Number of components	1	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4	4
surface mount	YES	YES	Yes	YES	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	pair	DUAL	pair	pair	pair
Transistor component materials	SILICON	SILICON	silicon	SILICON	silicon	silicon	silicon
Transistor polarity	-	-	NPN	-	NPN	NPN	NPN
Maximum on-time	-	-	400 ns	-	400 ns	400 ns	400 ns
Maximum off time	-	-	1500 ns	-	1500 ns	1500 ns	1500 ns
Maximum collector current	-	-	1 A	-	1 A	1 A	1 A
Maximum Collector-Emitter Voltage	-	-	45 V	-	45 V	45 V	45 V
state	-	-	TRANSFERRED	-	TRANSFERRED	TRANSFERRED	TRANSFERRED
packaging shape	-	-	Rectangle	-	Rectangle	Rectangle	Rectangle
Package Size	-	-	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Packaging Materials	-	-	Plastic/Epoxy	-	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	-	-	darlington	-	darlington	darlington	darlington
Transistor type	-	-	Universal small signal	-	Universal small signal	Universal small signal	Universal small signal
Minimum DC amplification factor	-	-	2000	-	2000	2000	2000
Rated crossover frequency	-	-	200 MHz	-	200 MHz	200 MHz	200 MHz

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