Q62702-P1164 datasheet, PDF - EEWORLD Datasheet

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Q62702-P1164: Description1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size153KB，5 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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Q62702-P1164 Overview

1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR

Q62702-P1164 Parametric

Parameter Name	Attribute value
Number of terminals	4
Transistor polarity	NPN
Maximum on-time	400 ns
Maximum off time	1500 ns
Maximum collector current	1 A
Maximum Collector-Emitter Voltage	45 V
state	TRANSFERRED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	darlington
Shell connection	COLLECTOR
Number of components	1
Transistor component materials	silicon
Transistor type	Universal small signal
Minimum DC amplification factor	2000
Rated crossover frequency	200 MHz

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NPN Silicon Darlington Transistors

BSP 50

… BSP 52

High collector current

Low collector-emitter saturation voltage

Complementary types: BSP 60 … BSP 62 (PNP)

Type

BSP 50

BSP 51

BSP 52

Marking

BSP 50

BSP 51

BSP 52

Ordering Code

(tape and reel)

Q62702-P1163

Q62702-P1164

Q62702-P1165

Pin Configuration

Package

SOT-223

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Peak collector current

Base current

Total power dissipation,

= 124 ˚C

Junction temperature

Storage temperature range

Thermal Resistance

Junction - ambient

Junction - soldering point

th JA

th JS

≤

Symbol

CER

CB0

EB0

tot

stg

Values

Unit

BSP 50 BSP 51 BSP 52

0.1

1.5

150

– 65 … + 150

˚C

100

K/W

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm

40 mm

1.5 mm/6 cm

Cu.

Semiconductor Group

5.91

Q62702-P1164 Related Products

	Q62702-P1164	BSP50	BSP50BSP52	BSP51	BSP52	Q62702-P1165	Q62702-P1163
Description	1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals	4	4	4	4	4	4	4
surface mount	Yes	YES	Yes	YES	YES	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	pair	DUAL	pair	DUAL	DUAL	pair	pair
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Number of components	1	1	1	1	1	1	1
Transistor component materials	silicon	SILICON	silicon	SILICON	SILICON	silicon	silicon
Transistor polarity	NPN	-	NPN	-	-	NPN	NPN
Maximum on-time	400 ns	-	400 ns	-	-	400 ns	400 ns
Maximum off time	1500 ns	-	1500 ns	-	-	1500 ns	1500 ns
Maximum collector current	1 A	-	1 A	-	-	1 A	1 A
Maximum Collector-Emitter Voltage	45 V	-	45 V	-	-	45 V	45 V
state	TRANSFERRED	-	TRANSFERRED	-	-	TRANSFERRED	TRANSFERRED
packaging shape	Rectangle	-	Rectangle	-	-	Rectangle	Rectangle
Package Size	SMALL OUTLINE	-	SMALL OUTLINE	-	-	SMALL OUTLINE	SMALL OUTLINE
Packaging Materials	Plastic/Epoxy	-	Plastic/Epoxy	-	-	Plastic/Epoxy	Plastic/Epoxy
structure	darlington	-	darlington	-	-	darlington	darlington
Transistor type	Universal small signal	-	Universal small signal	-	-	Universal small signal	Universal small signal
Minimum DC amplification factor	2000	-	2000	-	-	2000	2000
Rated crossover frequency	200 MHz	-	200 MHz	-	-	200 MHz	200 MHz

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