BSS 89
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th)
= 0.8...2.0V
Pin 1
G
Type
BSS 89
Type
BSS 89
BSS 89
BSS 89
Pin 2
D
Marking
SS89
Pin 3
S
V
DS
240 V
I
D
0.3 A
R
DS(on)
6
Ω
Package
TO-92
Ordering Code
Q62702-S519
Q62702-S619
Q62702-S385
Tape and Reel Information
E6288
E6296
E6325
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
Symbol
Values
240
240
Unit
V
V
DS
V
DGR
R
GS
= 20 kΩ
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
V
GS
V
gs
I
D
±
14
±
20
A
0.3
T
A
= 25 °C
DC drain current, pulsed
I
Dpuls
1.2
T
A
= 25 °C
Power dissipation
P
tot
1
W
T
A
= 25 °C
Semiconductor Group
1
12/05/1997
BSS 89
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Values
-55 ... + 150
-55 ... + 150
≤
125
E
55 / 150 / 56
K/W
Unit
°C
T
j
T
stg
R
thJA
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Unit
Static Characteristics
Drain- source breakdown voltage
V
(BR)DSS
240
-
1.5
0.1
10
-
10
4.5
5.3
-
2
V
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 °C
Gate threshold voltage
V
GS(th)
0.8
V
GS=
V
DS,
I
D
= 1 mA
Zero gate voltage drain current
I
DSS
-
-
-
1
100
0.2
µA
V
DS
= 240 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 240 V,
V
GS
= 0 V,
T
j
= 125 °C
V
DS
= 60 V,
V
GS
= 0 V,
T
j
= 25 °C
Gate-source leakage current
I
GSS
-
100
nA
Ω
-
-
6
10
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
R
DS(on)
V
GS
= 10 V,
I
D
= 0.3 A
V
GS
= 4.5 V,
I
D
= 0.3 A
Semiconductor Group
2
12/05/1997
BSS 89
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
Values
typ.
max.
Unit
g
fs
0.14
0.33
115
15
8
-
S
pF
-
155
25
12
ns
-
5
8
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 0.3 A
Input capacitance
C
iss
C
oss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.28 A
R
G
= 50
Ω
Rise time
t
r
-
10
15
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.28 A
R
G
= 50
Ω
Turn-off delay time
t
d(off)
-
30
40
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.28 A
R
G
= 50
Ω
Fall time
t
f
-
20
27
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.28 A
R
G
= 50
Ω
Semiconductor Group
3
12/05/1997
BSS 89
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
Reverse Diode
Inverse diode continuous forward current
I
S
T
A
= 25 °C
Inverse diode direct current,pulsed
typ.
max.
Unit
A
-
-
-
-
0.9
0.3
1.2
V
-
1.4
I
SM
V
SD
T
A
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.6 A
Semiconductor Group
4
12/05/1997
BSS 89
Power dissipation
P
tot
=
ƒ
(T
A
)
Drain current
I
D
=
ƒ
(T
A
)
parameter:
V
GS
≥
10 V
0.32
1.2
W
A
1.0
P
tot
0.9
0.8
I
D
0.24
0.20
0.7
0.6
0.5
0.12
0.4
0.3
0.2
0.04
0.1
0.0
0
20
40
60
80
100
120
°C
160
0.00
0
20
40
60
80
100
120
°C
160
0.08
0.16
T
A
T
A
Safe operating area
I
D
=f(V
DS
)
parameter :
D
= 0.01,
T
C
=25°C
Drain-source breakdown voltage
V
(BR)DSS
=
ƒ
(T
j
)
285
V
275
V
(BR)DSS
270
265
260
255
250
245
240
235
230
225
220
215
-60
-20
20
60
100
°C
160
T
j
Semiconductor Group
5
12/05/1997
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