SSM3J09FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J09FU
Management Switch
High Speed Switching Applications
·
·
Small package
Low on resistance: R
on
= 2.7
Ω
(max) (@V
GS
=
−10
V)
: R
on
= 4.2
Ω
(max) (@V
GS
=
−4
V)
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note1)
T
ch
T
stg
Rating
-30
±20
-200
-400
150
150
-55~150
Unit
V
V
mA
mW
°C
°C
Drain power dissipation (Ta
=
25°C)
Channel temperature
Storage temperature
JEDEC
JEITA
―
SC-70
2-2E1E
Note 1: Mounted on FR4 board
2
(25.4 mm
´
25.4 mm
´
1.6 t, Cu Pad: 0.6 mm
´
3)
Figure 1.
TOSHIBA
Weight: 0.006 g (typ.)
Marking
3
Equivalent Circuit
(top view)
3
Figure 1: 25.4 mm
´
25.4 mm
´
1.6 t,
Cu Pad: 0.6 mm
2
´
3
0.6 mm
DK
1.0 mm
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2002-01-16
SSM3J09FU
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
th
½Y
fs
½
Test Condition
V
GS
= ±16
V, V
DS
=
0
I
D
= -1
mA, V
GS
=
0
V
DS
= -30
V, V
GS
=
0
V
DS
= -5
V, I
D
= -0.1
mA
V
DS
= -5
V, I
D
= -100
mA
I
D
= -100
mA, V
GS
= -10
V
Drain-Source ON resistance
R
DS (ON)
I
D
= -100
mA, V
GS
= -4
V
I
D
= -100
mA, V
GS
= -3.3
V
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
C
iss
C
rss
C
oss
t
on
t
off
(Note2)
(Note2)
(Note2)
(Note2)
Min
¾
-30
¾
-1.1
115
¾
¾
¾
¾
¾
¾
¾
¾
Typ.
¾
¾
¾
¾
¾
2.1
3.3
4.0
22
5
14
85
85
Max
±1
¾
-1
-1.8
¾
2.7
4.2
6.0
¾
¾
¾
¾
¾
pF
pF
pF
ns
ns
W
Unit
mA
V
mA
V
mS
V
DS
= -5
V, V
GS
=
0, f
=
1 MHz
V
DS
= -5
V, V
GS
=
0, f
=
1 MHz
V
DS
= -5
V, V
GS
=
0, f
=
1 MHz
V
DD
= -5
V, I
D
= -100
mA,
V
GS
=
0~-4 V
Note 2: Pulse test
Switching Time Test Circuit
(a) Test circuit
(b) V
IN
0V
0
-4
V
10
ms
V
DD
= -5
V
D.U.
<
1%
=
Input: t
r
, t
f
<
5 ns
(Z
out
=
50
W)
Common Source
Ta
=
25°C
Output
Input
50
9
R
L
-4
V
90%
10%
V
DD
(c) V
OUT
V
DS (ON)
90%
10%
t
r
t
on
t
off
t
f
V
DD
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I
D
=
-100 mA
for
this product. For normal switching operation, V
GS (on)
requires higher voltage than V
th
and V
GS
(off) requires
lower voltage than V
th
.
(relationship can be established as follows: V
GS (off)
<
V
th
<
V
GS (on)
)
Please take this into consideration for using the device.
V
GS
recommended voltage of
-4.0
V or higher to turn on this product.
2
2002-01-16
SSM3J09FU
RESTRICTIONS ON PRODUCT USE
000707EAA
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
·
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
·
The information contained herein is subject to change without notice.
5
2002-01-16
Microcontroller MCU
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