SMA5127
Absolute maximum ratings
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
P
T
N channel
60
±20
4
8 (PW≤1ms, Duty≤1%)
N-channel + P-channel
3-phase motor drive
(T
a
=25°C)
External dimensions
B
•••
SMA
Ratings
P channel
–60
20
–4
–8 (PW≤1ms, Duty≤1%)
Unit
V
V
A
A
W
W
°C/W
°C/W
°C
°C
4 (Ta=25°C, with all circuits operating, without heatsink)
28 (Tc=25°C,with all circuits operating, with infinite heatsink)
31.25 (Junction-Air, Ta=25°C, with all circuits operating)
4.46 (Junction-Case, Tc=25°C, with all circuits operating)
150
–40 to +150
θ
j-a
θ
j-c
Tch
Tstg
sEquivalent
circuit diagram
1
Pch
2
8
3
9
7
11
10
Nch
4
6
5
12
Characteristic curves
I
D
-V
DS
Characteristics (Typical)
N-ch
8
10V
I
D
-V
GS
Characteristics (Typical)
P-ch
(T
a
=25°C)
(T
a
=25°C)
4.5V
N-ch
8
T
a
=–40°C
–8
(V
DS
=10V)
–
10
V
7
25°C
6
4.0V
–6
–
4.5V
6
5
125°C
I
D
(A)
I
D
(A)
–
4.0V
–4
–
3.6V
4
3.5V
I
D
(A)
4
3
2
1
0
2
V
GS
=3.0V
–2
–
3.2V
V
GS
=
–
2.7V
0
0
2
4
6
8
10
0
0
–2
–4
–6
–8
–10
0
1
2
3
4
5
6
7
V
DS
(V)
V
DS
(V)
V
GS
(V)
R
DS(ON)
-I
D
Characteristics (Typical)
N-ch
0.6
P-ch
(T
a
=25°C)
0.6
V
GS
=
–
4V
P-ch
(T
a
=25°C)
–8
T
c
=
–
40°C
(V
DS
=–10V)
0.5
=4V
V
GS
(ON)
(Ω)
0.5
–6
0.4
–
10V
0.3
125°C
25°C
(ON)
(Ω)
0.4
I
D
(A)
10V
0.3
–4
R
DS
R
DS
0.2
0.2
–2
0.1
0.1
0
0
1
2
3
4
5
6
7
8
0
0
–2
–4
–6
–8
0
0
–1
–2
–3
–4
–5
–6
–7
I
D
(A)
I
D
(A)
V
GS
(V)
R
DS(ON)
-T
C
Characteristics (Typical)
N-ch
0.8
I
D
=2A
V
GS
=4V
P-ch
0.8
I
D
=–2A
V
GS
=–10V
0.7
0.7
(ON)
(Ω)
0.6
(ON)
(Ω)
0.6
R
DS
R
DS
0.5
0.5
0.4
0.4
0.3
0.3
0.2
–40 –25
0
25
50
75
100
125
150
0.2
–40 –25
0
25
50
75
100
125
150
T
a
(°C)
T
a
(°C)
142
SMA5127
Electrical characteristics
N channel
Symbol
min
V
(BR)DSS
I
GSS
I
DSS
V
TH
Re
(yfs)
R
DS(ON)
Ciss
Coss
Crss
td
(on)
t
r
td
(off)
t
f
V
SD
t
rr
150
70
15
12
40
40
25
1.2
75
1.0
2.5
0.55
60
±10
100
2.0
Specification
typ
max
Unit
V
Conditions
I
D
=100
µ
A, V
GS
=0V
V
GS
=±20V
V
DS
=60V, V
GS
=0V
V
DS
=10V, I
D
=250
µ
A
V
DS
=10V, I
D
=2A
V
GS
=4V, I
D
=2A
V
DS
=10V
f=1.0MHz
V
GS
=0V
I
D
=2A, V
DD
20V,
R
L
=10Ω, V
GS
=5V,
see Fig.3 on page 16.
I
SD
=4A, V
GS
=0V
I
SD
=2A, V
GS
=0V,
di/dt=100A/
µ
s
320
130
40
20
95
70
60
–1.1
75
–1.0
3
0.55
Specification
min
–60
10
–100
–2.0
typ
max
P channel
Unit
V
Conditions
I
D
=–100
µ
A, V
GS
=0V
V
GS
= 20V
V
DS
=–60V, V
GS
=0V
V
DS
=–10V, I
D
=–250
µ
A
V
DS
=–10V, I
D
=–2A
V
GS
=–10V, I
D
=–2A
V
DS
=–10V,
f=1.0MHz,
V
GS
=0V
I
D
=–2A, V
DD
–20V,
R
L
=10Ω, V
GS
=–5V,
see Fig.4 on page 16.
I
SD
=–4A, V
GS
=0V
I
SD
=–2A, V
GS
=0V,
di/dt=100A/
µ
s
(T
a
=25°C)
µ
A
µ
A
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
V
ns
µ
A
µ
A
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
V
ns
Characteristic curves
Re
(yfs)
-I
D
Characteristics (Typical)
N-ch
5
T
c
=–40°C
25°C
1ms
10ms
R
DS (on)
LIMITED
Safe Operating Area (SOA)
P-ch
(V
DS
=–10V)
10
(V
DS
=10V)
5
N-ch
(Tc=25°C)
100µs
T
a
=–40°C
Re (yfs) (S)
1
25°C
Re (yfs) (S)
1
125°C
I
D
(A)
0.1
–0.05
–0.1
–1
–8
125°C
1
0.1
0.01
0.1
1
8
0.1
1
10
100
I
D
(A)
I
D
(A)
V
DS
(V)
Capacitance-V
DS
Characteristics (Typical)
NPN
1000
N-ch
V
GS
=0V
(T
a
=25°C) f=1MHz
PNP
1000
V
GS
=80V
(T
a
=25°C) f=1MHz
P-ch
P-ch
(Tc=25°C)
–10
1ms
100µs
Ciss
Capacitance (pF)
Capacitance (pF)
10ms
R
DS (ON)
LIMITED
Ciss
100
100
Coss
I
D
(A)
–1
Coss
Crss
10
5
0
Crss
10
5
0
–0.1
–1
10
20
30
40
50
–10
–20
–30
–40
–50
–10
–100
V
DS
(V)
V
DS
(V)
V
DS
(V)
I
DR
-V
SD
V
DS
-V
GS
Characteristics (Typical)
N-ch
5
P
T
-T
a
Characteristics
P-ch
(Ta=25°C)
30
With Silicon Grease
Natural Cooling
All Circuits Operating
(T
a
=25°C)
–5
4
–4
25
20
W
ith
V
DS
(V)
V
DS
(V)
P
T
(W)
3
–3
In
fin
ite
15
He
at
sin
2
I
D
=4A
–2
10
k
1
2A
–1
5
Without Heatsink
0
0
2
10
20
0
–2
–10
–20
0
50
100
150
V
GS
(V)
V
GS
(V)
T
a
(°C)
143
Package Type (Dimensions)
• SIP 8 (STA8Pin)
20.4 max
• SIP 10 (STA10Pin)
25.25
±
0.2
11.3
±
0.2
2.3
±
0.2
9.0
±
0.2
b
a
11.3
±
0.2
2.5 max
9.0
±
0.2
4.7
±
0.5
4.7
±
0.5
1.0
±
0.25
0.5
±
0.15
(2.54)
±
0.25
1.0
±
0.25
1.2
±
0.2
0.5
±
0.15
0.5
±
0.15
(2.54)
C1.5
±
0.5
0.5
±
0.15
1
E
2
B
3
C
4
B
5
C
6
B
7
C
8 9 10
B C E
C1.5
±
0.5
4.0
±
0.2
• SIP 12 (SMA12Pin)
Pin No.
1
2
3
4
5
6
7
8
• SIP 15 (SMA15Pin)
4.0
±
0.2
31.0
±
0.2
4.0
±
0.2
1.2
±
0.2
7
×
P2.54 = 17.78
9
×
2.54 = 22.86
a: Part Number
b: Lot No.
4.0
±
0.2
2.5
±
0.2
31.0
±
0.2
10.2
±
0.2
2.5
±
0.2
b
a
10.2
±
0.2
b
2.4
R-End
(10.4)
1.46
2.54
27.94
±
0.15
+0.2
‒0.1
0.65
‒0.1
0.55
‒0.1
+0.2
+0.2
0.85
1.2
±
0.1
14
×
P2.03
*
±
0.7
= 28.42
*
±1.0
1.15
‒0.1
+0.2
*
4.0
±
0.7
0.55
‒0.1
+0.2
a: Part Number
b: Lot No.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
• SIP 12 with Fin (SLA12Pin)
• SIP 15 with Fin (SLA15Pin)
φ
3.2
±
Ellipse
3.2
±
0.15
×
3.8
4.8
±
0.2
31.3
±
0.2
0.15
31.5max
31.0
±
0.2
24.4
±
0.2
3.8
φ
3.2
±
0.15
×
4.8
±
0.2
1.7
±
0.1
φ
3.2
±
0.15
31.0
±
0.2
24.4
±
0.2
1.7
±
0.1
16.4
±
0.2
16.0
±
0.2
9.9
±
0.2
13.0
±
0.2
16.0
±
0.2
13.0
±
0.2
a
b
2.45
±
(3.0) 6.7
±
0.5
0.2
9.5min
R-End
Pin1
1.45
±
0.15
11
×
P2.54
±
0.7
= 27.94
±
1.0
2.7
12
0.85
‒0.1
+0.2
1.2
±
0.15
a: Part Number
b: Lot No.
0.55
+0.2
‒0.1
2.2
±
0.7
0.65
‒0.1
+0.2
14
×
P2.03
±
0.7
=28.42
±
*
*
1.0
1.15
‒0.1
+0.2
*
4.0
±
0.7
0.55
‒0.1
+0.2
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
• SIP 21 with Fin (SLA21Pin)
31.0
±
0.2
24.4
±
0.2
16.4
±
0.2
φ
3.2
±
0.15
×
3.8
4.8
±
1.7
±
0.2
0.1
Gate burr
12.9
±
0.2
16
±
0.2
φ
3.2
±
0.15
9.9
±
0.2
b
17.9
±
(5)
a
2.45
±
0.2
0.6
4‒(R1)
0.65
‒0.1
+0.2
20
×
P1.43
3
±
0.5
±
0.5
=28.6
±
1.0
0.55
‒0.1
4
±
0.7
+0.2
31.3
±
0.2
1
2
3
4
5
6
7
9 11 13 15 17 19 21
8 10 12 14 16 18 20
a: Part Number
b: Lot No.
9.7
‒0.5
+1.0
9.7
‒0.5
+1.0
a
(3.0) 6.7
±
0.5
(Unit:mm)
190
Transistors
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