SMA5104 datasheet, PDF - EEWORLD Datasheet

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SMA5104: DescriptionN-channel + P-channel 3-phase motor drive; CategoryDiscrete semiconductor The transistor; File Size29KB，2 Pages; ManufacturerSANKEN; Websitehttp://www.sanken-ele.co.jp/en/

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SMA5104 Overview

N-channel + P-channel 3-phase motor drive

SMA5104 Parametric

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-T12
Contacts	12
Reach Compliance Code	unknow
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	2 mJ
Configuration	COMPLEX
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	0.22 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T12
Number of components	6
Number of terminals	12
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL AND P-CHANNEL
Maximum pulsed drain current (IDM)	10 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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SMA5104

Absolute maximum ratings

Symbol

V

DSS

V

GSS

I

D

I

D(pulse)

E

AS

*

P

T

N channel

60

±20

±5

±10

(PW≤1ms)

2

N-channel + P-channel

3-phase motor drive

(T

a

=25°C)

External dimensions

B

•••

SMA

Ratings

P channel

–60

20

4

8 (PW≤1ms)

—

Unit

V

A

mJ

W

°C/W

°C

4 (Ta=25°C, with all circuits operating, without heatsink)

28 (Tc=25°C,with all circuits operating, with infinite heatsink)

31.2 (Junction-Air, Ta=25°C, with all circuits operating)

4.46 (Junction-Case, Tc=25°C, with all circuits operating)

150

–40 to +150

θ

j-a

θ

j-c

Tch

Tstg

* : V

DD

=20V, L=1mH, I

D

=2A, unclamped, see Fig. E on page 15.

sEquivalent

circuit diagram

1

Pch

2

8

3

9

7

11

10

Nch

4

6

5

12

Characteristic curves

I

D

-V

DS

Characteristics (Typical)

10

10V

I

D

-V

GS

Characteristics (Typical)

P-ch

10

–10V

N-ch

7V

–8

N-ch

(V

DS

=10V)

8

–6

6

I

D

(A)

I

D

(A)

–4

4

5V

I

D

(A)

6V

–7V

6

4

–6V

T

C

=–40°C

25°C

–2

V

GS

=–4V

–5V

2

V

GS

=4V

2

125°C

0

–0

0

2

4

6

8

10

0

–2

–4

–6

–8

–10

0

2

4

6

8

V

DS

(V)

V

DS

(V)

V

GS

(V)

R

DS(ON)

-I

D

Characteristics (Typical)

N-ch

0.20

(V

GS

=10V)

P-ch

0.6

(V

GS

=–10V)

P-ch

–8

T

C

=–40°C

(V

DS

=–10V)

0.5

0.15

25°C

–6

125°C

(Ω)

0.4

I

D

(A)

(ON)

0.10

R

DS

R

DS

0.3

–4

0.2

0.05

–2

0.1

0

2

4

6

8

10

0

–0

0

–2

–4

–6

–8

0

–2

–4

–6

–8

–10

I

D

(A)

I

D

(A)

V

GS

(V)

R

DS(ON)

-T

C

Characteristics (Typical)

N-ch

0.3

I

D

=5A

V

GS

=10V

P-ch

1.0

I

D

=–4A

V

GS

=–10V

0.8

(Ω)

0.2

(Ω)

R

DS

(ON)

0.6

R

DS

(ON)

0.4

0.1

0.2

0

–40

0

50

100

150

0

–40

0

50

100

150

T

C

(°C)

T

C

(°C)

102

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