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BT139-600H

Description
Triacs high noise immunity
CategoryAnalog mixed-signal IC    Trigger device   
File Size35KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BT139-600H Overview

Triacs high noise immunity

BT139-600H Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Critical rise rate of commutation voltage - minimum value10 V/us
Critical rise rate of minimum off-state voltage100 V/us
Maximum DC gate trigger current100 mA
Maximum DC gate trigger voltage2.3 V
Maximum holding current60 mA
JESD-609 codee0
Maximum leakage current0.5 mA
Maximum on-state voltage1.5 V
Maximum operating temperature125 °C
Maximum rms on-state current16 A
Off-state repetitive peak voltage600 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Trigger device typeTRIAC
Philips Semiconductors
Product specification
Triacs
high noise immunity
GENERAL DESCRIPTION
Glass passivated triacs in a plastic
envelope, intended for use in
applications requiring high noise
immunity in addition to high,
bidirectional
blocking
voltage
capability and thermal cycling
performance. Typical applications
include motor control, industrial
lighting, heating and static switching.
BT139 series H
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
BT139-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500H
500
16
140
600H
600
16
140
800H
800
16
140
V
A
A
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
main terminal 1
PIN CONFIGURATION
tab
SYMBOL
T2
main terminal 2
gate
main terminal 2
1 23
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
mb
99 ˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
500
1
MAX.
-600
600
1
16
140
150
98
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997
1
Rev 1.200

BT139-600H Related Products

BT139-600H BT139 BT139-500H
Description Triacs high noise immunity Triacs high noise immunity Triacs high noise immunity
Is it Rohs certified? incompatible - incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) - Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow - unknow
Critical rise rate of commutation voltage - minimum value 10 V/us - 10 V/us
Critical rise rate of minimum off-state voltage 100 V/us - 100 V/us
Maximum DC gate trigger current 100 mA - 100 mA
Maximum DC gate trigger voltage 2.3 V - 2.3 V
Maximum holding current 60 mA - 90 mA
JESD-609 code e0 - e0
Maximum leakage current 0.5 mA - 0.5 mA
Maximum on-state voltage 1.5 V - 1.5 V
Maximum operating temperature 125 °C - 125 °C
Maximum rms on-state current 16 A - 16 A
Off-state repetitive peak voltage 600 V - 500 V
surface mount NO - NO
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
Trigger device type TRIAC - TRIAC
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